Datasheet > PZTA14

PZTA14

更新时间： 2024-11-06 03:40:27

品牌	Logo	应用领域
友顺 - UTC		晶体晶体管达林顿晶体管光电二极管放大器
页数	文件大小	规格书
2页	51K
描述
DARLINGTON TRANSISTOR

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数据手册

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PZTA14 数据手册

UTC PZTA14 NPN EPITAXIAL SILICON TRANSISTOR

DARLINGTON TRANSISTOR

DESCRIPTION

The UTC PZTA14 is a Darlington transistor.

FEATURES

*Collector-Emitter Voltage: VCES = 30V

*Collector Power Dissipation: Pc (max) = 1000 mW

SOT-223

1:EMITTER 2,4:COLLECTOR 3:BASE

ABSOLUTE MAXIMUM RATINGS (Ta=25°C)

PARAMETER

SYMBOL

VCBO

VCES

VEBO

VALUE

1000

500

UNIT

Collector-Base Voltage

Collector-Emitter Voltage

Emitter-Base Voltage

Collector Power Dissipation

Collector Current

Junction Temperature

Storage Temperature

°C

TSTG

150

-55 ~ +150

°C

ELECTRICAL CHARACTERISTICS ^{(Ta =25°C, unless otherwise specified)}

PARAMETER

Collector-Emitter Breakdown Voltage

Collector Cut-Off Current

SYMBOL

BVCES

ICBO

TEST CONDITIONS

Ic=100µA,IB=0

MIN MAX UNIT

20000

125

VCB=30V,IE=0

VEB=10V,Ic=0

100

Emitter Cut-Off Current

IEBO

DC Current Gain

Collector-Emitter Saturation Voltage

Base-Emitter on Voltage

hFE

VCE=5V,Ic=100mA

Ic=100mA,IB=0.1mA

VCE=5V,Ic=100mA

VCE=5V,Ic=10mA,

f=100MHz

VCE(sat)

VBE(on)

1.5

2.0

MHz

Current Gain Bandwidth Product

Pulse test: Pulse Width<300µs, Duty Cycle=2%

UTC UNISONIC TECHNOLOGIES CO., LTD.

QW-R207-004,B

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