Datasheet > PZTA06

PZTA06

更新时间： 2024-09-17 18:09:35

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1页	60K
描述
NPN Transistor

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中文翻译

获取价格

数据手册

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PZTA06 数据手册

SMD Type

TransistIoCrs

NPN General Pupose Amplifier

PZTA06

SOT-223

Unit: mm

+0.2

3.50_-0.2

6.50_-0.2

■ Features

●

Power dissipation：PC=1W

+0.2

0.90_-0.2

+0.1

3.00_-0.1

Collector current (DC)：IC=500mA

Complementary PNP Type Available (PZTA56)

+0.3

7.00_-0.3

1 Base

2 Collector

+0.1

3 Emitter

0.70_-0.1

2.9

4.6

4 Collector

■ Absolute Maximum Ratings Ta = 25℃

Parameter

Collector-base voltage

Symbol

VCBO

VCEO

VEBO

Rating

Unit

Collector-emitter voltage

Emitter-base voltage

500

Collector current

℃

Total Device Dissipation Alumina Substrate

Junction and Storage Temperature

TJ, Tstg

-55 to150

■ Electrical Characteristics Ta = 25℃

Parameter

Symbol

Test conditons

Min

Typ Max

Unit

Collector-base breakdown voltage

Collector-emitter breakdown voltage

Emitter-base breakdown voltage

Collector cut-off current

V(BR)CBO IC = 100μA, IE = 0

V(BR)CEO IC = 1.0 mA, IB = 0

V(BR)EBO IE =100μA, IC = 0

ICBO

IEBO

VCB=80 V, IE=0

0.1

μA

Emitter cut-off current

VEB=5V, IC=0

IC = 10 mA, VCE = 1.0 V

IC = 100 mA, VCE = 1.0 V

100

DC current gain *

hFE

Collector-emitter saturation voltage

Base-Emitter On Voltage

Transition frequency

VCE(sat) IC = 100 mA, IB = 10 mA

VBE(sat) IC = 100 mA, VCE = 1.0 V

0.25

1.2

IC = 10 mA, VCE = 2V, f = 100 MHz

100

MHz

* Pulse test: pulse width ≤ 300 μs, duty cycle ≤ 2.0%.

■ Marking

Marking

A06

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