Datasheet > PZT949

PZT949

更新时间： 2024-11-06 10:19:15

品牌	Logo	应用领域
SECOS		晶体晶体管
页数	文件大小	规格书
2页	447K
描述
Silicon Planar High Current Gain Transistor

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PZT949 数据手册

PZT949

PNP Transistor

Silicon Planar High Current Gain Transistor

Elektronische Bauelemente

RoHS Compliant Product

A suffix of “-C” specifies halogen & lead-free

SOT-223

APPLICATION

PZT949 is designed for general purpose switching and amplifier applications.

Top View

C B

FEATURES

ꢀ

6Amps continuous current, up to 20Amps pulse current

Very low saturation voltage

ꢀ

Collector

MARKING

9 4 9

ꢀꢀꢀꢀ

ꢀ

= Date code

Millimeter

REF.

Base

Min.

Max.

6.70

7.30

3.70

1.90

Min.

Max.

0.10

2.00

0.35

1.05

6.30

6.70

3.30

1.42

0.02

1.50

0.25

0.85

Emitter

4.60 REF.

2.30 REF.

0.60

0.80

2.90

3.10

MAXIMUM RATINGS* (Tamb=25 °C, unless otherwise specified)

PARAMETER

SYMBOL

V_CBO

VALUE

UNIT

Collector to Base Voltage

-50

Collector to Emitter Voltage

Emitter to Base Voltage

Collector Current (DC)

V_CEO

-30

V_EBO

-6

I_C

-5.5

Collector Current (Pulse)

Total Power Dissipation

Junction, Storage Temperature

I_CM

-20

P_D

T_J, T_STG

150, -55~150

°C

*The power which can be dissipated assuming the device is mounted in typical manner on a PCB with copper equal to 2 inches x 2 inches

ELECTRICALCHARACTERISTICS (Tamb=25 °C unless otherwise specified)

PARAMETER

SYMBOL

MIN. TYP. MAX. UNIT

TEST CONDITIONS

Collector - Base Breakdown Voltage

BV_CBO

-50

I_C= -100µA , I_E= 0

Collector - Emitter Breakdown Voltage

(With Real Device Limit)

BV_CER

-50

I_C= -1µA , RB≦1KΩ

Collector - Emitter Breakdown Voltage

Emitter - Base Breakdown Voltage

Collector Base Cut - Off Current

BV_CEO

BV_EBO

I_CBO

-30

-6

I_C= -10mA, I_B= 0

I_E= -100µA ,I_C= 0

V_CB= -40V, I_E= 0

-50

Collector Base Cut - Off Current

(With Real Device Limit)

I_CER

-50

V_CB= -40V ,R≦1KΩ

Emitter Base Cut - Off Current

I_EBO

-10

V_EB= -6V, I_C= 0

*V_CE(sat)1

*V_CE(sat)2

*V_CE(sat)3

*V_CE(sat)4

*V_BE(sat)

*V_BE(on)

-75

I_C= -0.5A, I_B= -20 mA

I_C= -1.0A, I_B= -20 mA

I_C= -2.0A, I_B= -200 mA

I_C= -5.5A, I_B= -500 mA

V_CE= -1V, I_C= -5.5 A

V_CE= -1V, I_C= -10 mA

V_CE= -1V, I_C= -1 A

-140

Collector - Emitter Saturation Voltage

-270

-440

-1.25

Base - Emitter Voltage

DC Current Gain

-1.06

*h_FE

100

*h_FE

100

300

*h_FE

V_CE= -1V, I_C= -5 A

*h_FE

100

122

120

130

V_CE= -2V, I_C= -20 A

Transition Frequency

f_T

MHz V_CE= -10V, I_C= -100mA, f = 50 MHz

Collector Output Capacitance

C_OB

t_ON

V_CB= -10 V, I_E=0, f = 1 MHz

Turn-on

Turn-off

V_CC= -10 V, I_C= -4 A,

I_B1= -I_B2= -400 mA

Switching Time

t_OFF

*Measured under pulse condition. Pulse width = 300µs, duty cycle ≦ 2%.

http://www.SeCoSGmbH.com/

Any changes of specification will not be informed individually.

18-Nov-2009 Rev. A

Page 1 of 2

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与PZT949相关器件

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