Datasheet > PZT965

PZT965

更新时间： 2024-11-06 10:19:15

品牌	Logo	应用领域
SECOS		晶体晶体管
页数	文件大小	规格书
2页	752K
描述
Epitaxial Planar Transistor

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中文翻译

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PZT965 数据手册

PZT965

NPN Transistor

Epitaxial Planar Transistor

Elektronische Bauelemente

RoHS Compliant Product

SOT-223

Description

The PZT965 is designed for use as

AF output amplifier and flash unit.

Millimeter

Min. Max.

13̓TYP.

2.30 REF.

Millimeter

REF.

Min.

Max.

7.30

3.10

0.10

10̓

6.70

2.90

0.02

0̓

9 6 5

Date Code

6.30

6.70

3.70

1.80

6.30

3.30

1.40

0.60

0.25

0.80

0.35

Ta=25

MAXIMUM RATINGS

ABSOLUTE

Symbol

Parameter

Value

Units

V_CBO

Collector-Base Voltage

V^CEO

V^EBO

Collector-Emitter Voltage

Emitter-Base Voltage

Collector Current (Continous)

Collector Current (Peak PT=10mS)

Total Power Dissipation

Storage Temperature

Junction and

-55~+150

TJ,

Tstg

ELECTRICAL CHARACTERISTICS Tamb=25

unless otherwise specified

Typ.

Uni

Parameter

Symbol

BVCBO

*BVCEO

BVEBO

ICBO

Min

Max

Test Conditions

IC= 100µA

IC= 1mA

Collector-Base Breakdown Voltage

Collector-Emitter Breakdown Voltage

Emitter-Base Breakdown Voltage

Collector-Base Cutoff Current

IE= 10µA

VCB= 60V

0.1

Emitter-Base Cutoff Current

Collector Saturation Voltage

IEBO

VEB=

0.35

800

*VCE(sat)

IC=3A,IB=0.1A

*hFE1

*hFE2

230

VCE= 2V, IC=0.5A

VCE= 2V, IC=2 A

DC Current Gain

150

Gain-Bandwidth Product

Output Capacitance

150

VCE= 6V, IE= 50mA

VCB= 20V, f=1MHz

Cob

≦

*Pulse width 300 s, Duty Cycle 2%

Classification of hFE

Rank

340~600

Range

http://www.SeCoSGmbH.com

Any changing of specification will not be informed individual

21-Oct-2009 Rev. B

Page 1 of 2

中文翻译

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