Datasheet > PZTA06

PZTA06

更新时间： 2024-09-17 14:54:27

品牌	Logo	应用领域
江苏长电/长晶 - CJ		/
页数	文件大小	规格书
4页	742K
描述
SOT-223

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中文翻译

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技术参数
数据手册

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PZTA06 技术参数

生命周期：	Contact Manufacturer	包装说明：	,
Reach Compliance Code：	unknown	风险等级：	5.58
Base Number Matches：	1

PZTA06 数据手册

JIANGSU CHANGJING ELECTRONICS TECHNOLOGY CO., LTD

SOT-223 Plastic-Encapsulate Transistors

SOT-223

PZTA06 TRANSISTOR (NPN)

FEATURES

1. BASE



Low Voltage and High Current

General Purpose Amplifier Applications

2. COLLECTOR

3. EMITTER

MARKING:

MAXIMUM RATINGS (T_a=25℃ unless otherwise noted)

Symbol

V_CBO

V_CEO

V_EBO

I_C

Parameter

Value

Unit

Collector-Base Voltage

Collector-Emitter Voltage

Emitter-Base Voltage

500

Collector Current

Collector Power Dissipation

P_C

Thermal Resistance From Junction To Ambient

Operation Junction and Storage Temperature Range

125

R_θJA

T_J,T_stg

℃/W

℃

-55~+150

ELECTRICAL CHARACTERISTICS (T_a=25℃ unless otherwise specified)

Parameter

Symbol

V_(BR)CBOI_C=0.1mA,I_E=0

V_(BR)CEOI_C=1mA,I_B=0

V_(BR)EBOI_E=0.1mA,I_C=0

Test conditions

Min

Typ

Max

Unit

Collector-base breakdown voltage

Collector-emitter breakdown voltage

Emitter-base breakdown voltage

Collector cut-off current

I_CBO

I_CEO

V_CB=80V,I_E=0

100

V_CE=60V,I_B=0

Collector cut-off current

I_EBO

V_EB=3V, I_C=0

Emitter cut-off current

h_FE(1)

h_FE(2)

V_CE(sat)

V_BE

V_CE=1V, I_C=10mA

V_CE=1V, I_C=100mA

I_C=100mA,I_B=10mA

V_CE=1V, I_C=100mA

VCE=2V,IC=10mA, f=100MHz

100

DC current gain

0.25

1.2

Collector-emitter saturation voltage

Base-emitter voltage

f_T

100

MHz

Transition frequency

*Pulse test: pulse width ≤300μs, duty cycle≤ 2.0%.

www.jscj-elec.com

Rev. - 2.0

12 3 4

中文翻译

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