PZT951

更新时间： 2024-11-06 03:40:27

品牌	Logo	应用领域
WEITRON		晶体晶体管
页数	文件大小	规格书
4页	194K
描述
PNP Silicon Planar High Current Transistor

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中文翻译

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技术参数
数据手册

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PZT951 技术参数

生命周期：	Contact Manufacturer	包装说明：	,
Reach Compliance Code：	unknown	风险等级：	5.61
Base Number Matches：	1

PZT951 数据手册

PZT951

PNP Silicon Planar High Current Transistor

P b

COLLECTOR

2, 4

SOT-223

Lead(Pb)-Free

1. BASE

BASE

2.COLLECTOR

3.EMITTER

4.COLLECTOR

EM ITTER

ABSOLUTE MAXIMUM RATINGS

Rating

(T =25 C)

Symbol

Value

Unit

-100

Collector to Base Voltage

CBO

-60

CEO

Collector to Emitter Voltage

Collector to Base Voltage

Collector Current

-6

EBO

I (DC)

-5

-15

I (Pulse)

Collector Current

Total Device Disspation T =25°C

˚C

+150

-55 to +150

Junction Temperature

Storage, Temperature

Tstg

*Device mounted in a typical manner on a P.C.B with copper 4 inches x 4 inches(min).

Device Marking

PZT951=PZT951

ELECTRICAL CHARACTERISTICS

Characteristics

Collector-Base Breakdown Voltage

I =-100µA, I =0

Symbol

Min

Max

Unit

-100

CBO

Collector-Emitter Breakdown Voltage

I =-1µA, R ≤1kΩ

-100

-60

-6

CER

CEO

EBO

Collector-Emitter Breakdown Voltage⁽¹⁾

I =-10mA, I =0

Emitter-Base Breakdown Voltage

I =-100µA, I =0

Collector Cut-Oﬀ Current

=-80V, I =0

-50

-10

CBO

Collector Cut-Oﬀ Current

=-80V, R≤1kΩ

CER

Emitter-Cut-Oﬀ Current

EBO

V =-6V, I =0

WEITRON

http://www.weitron.com.tw

1/4

Rev.A 13-Jan-06

12 3 4

中文翻译

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