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PZT651T3 PDF预览

PZT651T3

更新时间： 2024-09-15 19:53:35
品牌 Logo 应用领域
安森美 - ONSEMI 光电二极管晶体管
页数 文件大小 规格书
4页 100K
描述
2000mA, 60V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-261AA, CASE 318E-04, 4 PIN

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中文翻译

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PZT651T3 技术参数

是否无铅： 含铅是否Rohs认证： 不符合
生命周期：Obsolete零件包装代码：TO-261AA
包装说明：CASE 318E-04, 4 PIN针数：4
Reach Compliance Code：not_compliantECCN代码：EAR99
风险等级：5.48Is Samacsys：N
外壳连接：COLLECTOR最大集电极电流 (IC)：2 A
集电极-发射极最大电压：60 V配置：SINGLE
最小直流电流增益 (hFE)：40JEDEC-95代码：TO-261AA
JESD-30 代码：R-PDSO-G4JESD-609代码：e0
元件数量：1端子数量：4
最高工作温度：150 °C封装主体材料：PLASTIC/EPOXY
封装形状：RECTANGULAR封装形式：SMALL OUTLINE
峰值回流温度（摄氏度）：240极性/信道类型：NPN
最大功率耗散 (Abs)：0.8 W认证状态：Not Qualified
子类别：Other Transistors表面贴装：YES
端子面层：Tin/Lead (Sn/Pb)端子形式：GULL WING
端子位置：DUAL处于峰值回流温度下的最长时间：30
晶体管元件材料：SILICON标称过渡频率 (fT)：75 MHz
Base Number Matches：1

PZT651T3 数据手册

 浏览型号PZT651T3的Datasheet PDF文件第2页浏览型号PZT651T3的Datasheet PDF文件第3页浏览型号PZT651T3的Datasheet PDF文件第4页 
PZT651  
NPN Silicon Planar  
Epitaxial Transistor  
This NPN Silicon Epitaxial transistor is designed for use in  
industrial and consumer applications. The device is housed in the  
SOT−223 package which is designed for medium power surface  
mount applications.  
http://onsemi.com  
SOT−223 package ensures level mounting, resulting in improved  
thermal conduction, and allows visual inspection of soldered joints.  
The formed leads absorb thermal stress during soldering, eliminating  
the possibility of damage to the die.  
SOT−223 PACKAGE HIGH CURRENT  
NPN SILICON TRANSISTOR  
SURFACE MOUNT  
Features  
• High Current  
4
1
2
3
• The SOT−223 Package can be Soldered Using Wave or Reflow  
• Available in 12 mm Tape and Reel  
SOT−223  
CASE 318E−04  
STYLE 1  
♦ Use PZT651T1 to Order the 7 inch/1000 Unit Reel  
♦ Use PZT651T3 to Order the 13 inch/4000 Unit Reel  
• PNP Complement is PZT751T1  
COLLECTOR 2, 4  
• S Prefix for Automotive and Other Applications Requiring Unique  
Site and Control Change Requirements; AEC−Q101 Qualified and  
PPAP Capable  
BASE  
1
• These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS  
Compliant*  
EMITTER 3  
MAXIMUM RATINGS (T = 25°C unless otherwise noted)  
C
MARKING DIAGRAM  
Rating  
Collector−Emitter Voltage  
Collector−Base Voltage  
Emitter−Base Voltage  
Collector Current  
Symbol  
Value  
60  
Unit  
Vdc  
Vdc  
Vdc  
Adc  
W
V
CEO  
V
CBO  
V
EBO  
AYW  
651 G  
G
80  
5.0  
2.0  
1
I
C
Total Power Dissipation  
P
D
A
Y
= Assembly Location  
= Year  
@ T = 25°C (Note 1)  
Derate above 25°C  
0.8  
6.4  
A
mW/°C  
°C  
WW = Work Week  
G
= Pb−Free Package  
Storage Temperature Range  
Junction Temperature  
T
−65 to 150  
stg  
(Note: Microdot may be in either location)  
T
150  
°C  
J
THERMAL CHARACTERISTICS  
Characteristic  
ORDERING INFORMATION  
†
Symbol  
Max  
Unit  
Device  
Package  
Shipping  
Thermal Resistance from  
Junction−to−Ambient in Free Air  
R
156  
°C/W  
q
JA  
PZT651T1G  
SOT−223 1,000 / Tape & Reel  
(Pb−Free)  
Maximum Temperature for Soldering  
Purposes  
Time in Solder Bath  
T
260  
10  
°C  
SPZT651T1G  
SOT−223 1,000 / Tape & Reel  
(Pb−Free)  
L
Sec  
†For information on tape and reel specifications,  
including part orientation and tape sizes, please  
refer to our Tape and Reel Packaging Specifications  
Brochure, BRD8011/D.  
Stresses exceeding Maximum Ratings may damage the device. Maximum  
Ratings are stress ratings only. Functional operation above the Recommended  
Operating Conditions is not implied. Extended exposure to stresses above the  
Recommended Operating Conditions may affect device reliability.  
1. Device mounted on a FR−4 glass epoxy printed circuit board using minimum  
recommended footprint.  
*For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting  
Techniques Reference Manual, SOLDERRM/D.  
© Semiconductor Components Industries, LLC, 2013  
1
Publication Order Number:  
August, 2013 − Rev. 8  
PZT651T1/D  
 
1234

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