Datasheet > PZT6718

PZT6718

更新时间： 2024-09-15 10:19:15

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描述
Epitaxial Planar Transistor

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中文翻译

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PZT6718 数据手册

PZT6718

NPN Transistor

Elektronische Bauelemente

Epitaxial Planar Transistor

RoHS Compliant Product

SOT-223

Description

The PZT6718 is designed for general

purpose medium power amplifier and

switching.

Millimeter

Min. Max.

13̓TYP.

REF.

Min.

Max.

7.30

3.10

0.10

10̓

6.70

2.90

0.02

0̓

2.30 REF.

6 7 1 8

6.30

6.70

3.70

1.80

Date Code

6.30

3.30

1.40

0.60

0.25

0.80

0.35

Ta=25

MAXIMUM RATINGS

ABSOLUTE

Symbol

Parameter

Value

Units

V_CBO

Collector-Base Voltage

100

V^CEO

V^EBO

Collector-Emitter Voltage

Emitter-Base Voltage

Collector Current

Total Power Dissipation

1.5

Storage Temperature

-55~+150

Junction and

TJ,

Tstg

ELECTRICAL CHARACTERISTICS Tamb=25

unless otherwise specified

Typ.

Uni

Parameter

Symbol

BVCBO

BVCEO

BVEBO

ICBO

Min

Max

Test Conditions

IC= 100µA

IC= 1mA

Collector-Base Breakdown Voltage

Collector-Emitter Breakdown Voltage

Emitter-Base Breakdown Voltage

Collector-Base Cutoff Current

100

IE= 10µA

VCB= 80V

100

350

Collector Saturation Voltage

*VCE(sat)

IC=350mA,IB=35mA

*hFE1

*hFE2

*hFE3

100

310

VCE= 1V, IC=50mA

VCE= 1V, IC=250mA

DC Current Gain

VCE= 1V, IC=500mA

Gain-Bandwidth Product

Output Capacitance

VCE= 10V, IC= 50mA,f=100MHz

VCB=10V, f=1MHz

Cob

≦

*Pulse width 380 s, Duty Cycle 2%

http://www.SeCoSGmbH.com

Any changing of specification will not be informed individual

Page 1 of 2

01-Jun-2002 Rev. A

中文翻译

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