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PZT651

更新时间： 2024-09-14 12:04:43
品牌 Logo 应用领域
安森美 - ONSEMI 晶体晶体管
页数 文件大小 规格书
4页 107K
描述
NPN Silicon Planar Epitaxial Transistor

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中文翻译

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PZT651 数据手册

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PZT651  
NPN Silicon Planar  
Epitaxial Transistor  
This NPN Silicon Epitaxial transistor is designed for use in  
industrial and consumer applications. The device is housed in the  
SOT−223 package which is designed for medium power surface  
mount applications.  
http://onsemi.com  
SOT−223 package ensures level mounting, resulting in improved  
thermal conduction, and allows visual inspection of soldered joints.  
The formed leads absorb thermal stress during soldering, eliminating  
the possibility of damage to the die.  
SOT−223 PACKAGE HIGH CURRENT  
NPN SILICON TRANSISTOR  
SURFACE MOUNT  
Features  
• High Current  
4
1
2
3
• The SOT−223 Package can be Soldered Using Wave or Reflow  
• Available in 12 mm Tape and Reel  
SOT−223  
CASE 318E−04  
STYLE 1  
♦ Use PZT651T1 to Order the 7 inch/1000 Unit Reel  
♦ Use PZT651T3 to Order the 13 inch/4000 Unit Reel  
• PNP Complement is PZT751T1  
COLLECTOR 2, 4  
• S Prefix for Automotive and Other Applications Requiring Unique  
Site and Control Change Requirements; AEC−Q101 Qualified and  
PPAP Capable  
BASE  
1
• These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS  
Compliant*  
EMITTER 3  
MAXIMUM RATINGS (T = 25°C unless otherwise noted)  
C
MARKING DIAGRAM  
Rating  
Collector−Emitter Voltage  
Collector−Base Voltage  
Emitter−Base Voltage  
Collector Current  
Symbol  
Value  
60  
Unit  
Vdc  
Vdc  
Vdc  
Adc  
W
V
CEO  
V
CBO  
V
EBO  
AYW  
651 G  
G
80  
5.0  
2.0  
1
I
C
Total Power Dissipation  
P
D
A
Y
= Assembly Location  
= Year  
@ T = 25°C (Note 1)  
Derate above 25°C  
0.8  
6.4  
A
mW/°C  
°C  
WW = Work Week  
G
= Pb−Free Package  
Storage Temperature Range  
Junction Temperature  
T
−65 to 150  
stg  
(Note: Microdot may be in either location)  
T
150  
°C  
J
THERMAL CHARACTERISTICS  
Characteristic  
ORDERING INFORMATION  
†
Symbol  
Max  
Unit  
Device  
Package  
Shipping  
Thermal Resistance from  
Junction−to−Ambient in Free Air  
R
156  
°C/W  
q
JA  
PZT651T1G  
SOT−223 1,000 / Tape & Reel  
(Pb−Free)  
Maximum Temperature for Soldering  
Purposes  
Time in Solder Bath  
T
260  
10  
°C  
SPZT651T1G  
SOT−223 1,000 / Tape & Reel  
(Pb−Free)  
L
Sec  
†For information on tape and reel specifications,  
including part orientation and tape sizes, please  
refer to our Tape and Reel Packaging Specifications  
Brochure, BRD8011/D.  
Stresses exceeding Maximum Ratings may damage the device. Maximum  
Ratings are stress ratings only. Functional operation above the Recommended  
Operating Conditions is not implied. Extended exposure to stresses above the  
Recommended Operating Conditions may affect device reliability.  
1. Device mounted on a FR−4 glass epoxy printed circuit board using minimum  
recommended footprint.  
*For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting  
Techniques Reference Manual, SOLDERRM/D.  
© Semiconductor Components Industries, LLC, 2013  
1
Publication Order Number:  
August, 2013 − Rev. 8  
PZT651T1/D  
 
1234

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PZT651 替代型号

型号 品牌 替代类型 描述 数据表
PZT651T1 ONSEMI

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 HIGH CURRENT NPN SILICON TRANSISTOR SURFACE MOUNT

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