Datasheet > PZT65

PZT65

更新时间： 2024-09-13 22:26:03

品牌	Logo	应用领域
安森美 - ONSEMI		晶体晶体管
页数	文件大小	规格书
6页	104K
描述
HIGH CURRENT NPN SILICON TRANSISTOR SURFACE MOUNT

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PZT65 数据手册

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by PZT651T1/D

SEMICONDUCTOR TECHNICAL DATA

Motorola Preferred Device

This NPN Silicon Epitaxial transistor is designed for use in industrial and consumer

applications. The device is housed in the SOT–223 package which is designed for

medium power surface mount applications.

SOT–223 PACKAGE

HIGH CURRENT

NPN SILICON

TRANSISTOR

SURFACE MOUNT

•

High Current: 2.0 Amp

The SOT–223 package can be soldered using wave or reflow.

SOT–223 package ensures level mounting, resulting in improved thermal

conduction, and allows visual inspection of soldered joints. The formed

leads absorb thermal stress during soldering, eliminating the possibility

of damage to the die.

•

Available in 12 mm Tape and Reel

Use PZT651T1 to order the 7 inch/1000 unit reel

Use PZT651T3 to order the 13 inch/4000 unit reel

COLLECTOR 2,4

BASE

PNP Complement is PZT751T1

CASE 318E–04, STYLE 1

TO–261AA

EMITTER 3

MAXIMUM RATINGS (T = 25°C unless otherwise noted)

Rating

Collector–Emitter Voltage

Collector–Base Voltage

Symbol

Value

Unit

Vdc

Adc

CEO

CBO

EBO

Emitter–Base Voltage

5.0

2.0

Collector Current

(1)

Total Power Dissipation @ T = 25°C

0.8

6.4

Watts

mW/°C

Derate above 25°C

Storage Temperature Range

Junction Temperature

DEVICE MARKING

651

stg

–65 to 150

150

°C

THERMAL CHARACTERISTICS

Characteristic

Symbol

Max

Unit

Thermal Resistance from Junction–to–Ambient in Free Air

156

°C/W

θJA

Maximum Temperature for Soldering Purposes

Time in Solder Bath

260

°C

Sec

1. Device mounted on a FR–4 glass epoxy printed circuit board using minimum recommended footprint.

Preferred devices are Motorola recommended choices for future use and best overall value.

Thermal Clad is a trademark of the Bergquist Company

REV 1

Motorola Small–Signal Transistors, FETs and Diodes Device Data

Motorola, Inc. 1996

12 3 4 5 6

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