Datasheet > PZT559A

PZT559A

更新时间： 2024-09-14 10:19:15

品牌	Logo	应用领域
SECOS		晶体晶体管
页数	文件大小	规格书
4页	704K
描述
Silicon Planar Medium Power Transistor

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中文翻译

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PZT559A 数据手册

PZT559A

PNP Silicon

Silicon Planar Medium Power Transistor

Elektronische Bauelemente

RoHS Compliant Product

A suffix of “-C” specifies halogen & lead-free

DESCRIPTION

SOT-223

The PZT559A is designed for general purpose switching

and amplifier applications.

FEATURES

ꢀ

4 Amps continuous current, up to 10 Amps peak current.

Excellent gain characteristic specified up to 3 Amps

Very low saturation voltages

MARKING

559A

ꢁꢁꢁꢁ

Date code

Millimeter

REF.

Min.

6.30

6.70

3.30

1.42

Max.

6.70

7.30

3.70

1.90

Min.

Max.

0.10

2.00

0.35

1.05

0.02

1.50

0.25

0.85

PACKAGE INFORMATION

Package

MPQ

Leader Size

4.60 REF.

2.30 REF.

0.60

0.02

0.80

0.10

2.90

3.10

SOT-223

2.5K

13’ inch

13 TYP.

0°

10°

Collector

Base

Emitter

ABSOLUTE MAXIMUM RATINGS (T_A= 25°C unless otherwise noted)

Parameter

Collector to Base Voltage

Collector to Emitter Voltage

Emitter to Base Voltage

Collector Current (DC)

Symbol

V_CBO

V_CEO

V_EBO

I_C

Ratings

Unit

-180

-140

-7

-4

Collector Current (Pulse)

Total Power Dissipation ¹

Total Power Dissipation ²

I_CM

-10

1.6

℃

P_D

Junction, Storage Temperature

T_J, T_STG

+150, -55~150

Notes：

1. Surface mounted on 52mm x 52mm x 1.6mm copper pad of FR4 board.

2. Surface mounted on 25mm x 25mm x 1.6mm copper pad of FR4 board.

http://www.SeCoSGmbH.com/

Any changes of specification will not be informed individually.

28-Apr-2011 Rev. A

Page 1 of 4

12 3 4

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