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TY Semiconductor Co., Ltd 更新时间：2018-01-25 00:50:40

台湾TY专注致力于电源管理IC及功率器件（MOSFET）Discrete研发、设计、制造、封装、测试及行销业务。为客户提供完整的解决方案及具价格的竞争优势。产品涵盖电源管理、运算放大器，低压LV MOS管、中压MV MOS管、三极管、高频管等，封装形式覆盖SC-70、SC-70-5、SC70-6、SOT23、SOT23-5、SOT23-6、SOT523、SOT323、SOT363、SOT223、SOT89、SOT252、DFN1010、DFN3*3、DFN5*6、SOP8系列。

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型号	品牌	价格	文档	应用	描述

2SB1397	TYSEMI	获取价格		晶体二极管晶体管	Low saturation voltage. Contains diode between collector and emitter.

2SB1396	TYSEMI	获取价格			Adoption of FBET,MBIT processes Large current capacity

2SB1394	TYSEMI	获取价格			Contains input resistance (R1), base-to-emitter resistance (RBE). Low saturation voltage.

2SB1386	TYSEMI	获取价格			Low VCE(sat). VCE(sat) = -0.35V (Typ.) Excellent DC current gain

2SB1325	TYSEMI	获取价格		晶体二极管晶体管	Low saturation voltage. Contains diode between collector and emitter.

2SB1302	TYSEMI	获取价格		晶体晶体管开关	Adoption of FBET, MBIT processes. Low collector-to-emitter saturation voltage.

2SB1295	TYSEMI	获取价格			Very small-sized package permitting sets to be made smaller and slimer.

2SB1275	TYSEMI	获取价格			High breakdown voltage.(BVCEO = -160V) Low collector output capacitance.

2SB1266	TYSEMI	获取价格			Suitable for sets whose heighit is restricted. High reliability.

2SB1261-Z	TYSEMI	获取价格		晶体晶体管开关	Low VCE(sat): VCE(sat) -0.3V. High hFE. Collector to base voltage VCBO -60 V

2SB1220	TYSEMI	获取价格			High collector-emitter voltage VCEO Low noise voltage NV

2SB1219A	TYSEMI	获取价格		晶体晶体管光电二极管放大器	Large collector current IC. Collector-base voltage VCBO -60 V

2SB1218	TYSEMI	获取价格			High forward current transfer ratio hFE. Collector-base voltage VCBO -45 V

2SB1215	TYSEMI	获取价格			Low collector-to-emitter saturation voltage. Excllent linearity of hFE. Fast switching tim

2SB1205	TYSEMI	获取价格		开关	Low saturation voltage.Fast switching speed. Large current capacity.

2SB1204	TYSEMI	获取价格		晶体晶体管开关	Low collector-to-emitter saturation voltage. High current and high fT. Excellent linearity

2SB1203	TYSEMI	获取价格		晶体晶体管开关	Low collector-to-emitter saturation voltage. High current and high fT. Excellent linearity

2SB1202	TYSEMI	获取价格		开关	Low collector-to-emitter saturation voltage. Fast switching speed.

2SB1201	TYSEMI	获取价格		开关	Low collector-to-emitter saturation voltage. Fast switching speed.

2SB1197K	TYSEMI	获取价格		晶体晶体管开关光电二极管	Low VCE(sat).VCE(sat) -0.5V IC / IB= -0.5A / -50mA .PNP silicon transistor

2SB1189	TYSEMI	获取价格		晶体晶体管	High breakdown voltage, BVCEO=-80V, and high current, IC=-0.7A.

2SB1188	TYSEMI	获取价格		晶体晶体管	Low VCE(sat). VCE(sat) = -0.5V (Typ.) (IC/IB = -2A / -0.2A)

2SB1184	TYSEMI	获取价格		晶体晶体管	Low VCE(sat). PNP silicon transistor. Epitaxial planar type

2SB1176	TYSEMI	获取价格		晶体晶体管开关光电二极管	Low collector-emitter saturation voltage VCE(sat). Large collector current IC.

2SB1175	TYSEMI	获取价格			Satisfactory linearity of forward current transfer ratio hFE. Large collector current IC.

2SB1174	TYSEMI	获取价格			Low collector-emitter saturation voltage VCE(sat). Large collector current IC.

2SB1169A	TYSEMI	获取价格			High forward current transfer ratio hFE which has satisfactory linearity.

2SB1132	TYSEMI	获取价格			Low VCE(sat) Compliments to 2SD1664 Collector-Base Voltage VCBO -40 V

2SB1125	TYSEMI	获取价格		晶体晶体管放大器	High DC Current gain. Large Current Capaity and wie ASO Collector-base voltage VCBO -80 V

2SB1124	TYSEMI	获取价格		晶体晶体管开关	Adoption of FBET, MBIT processes. Low collector-to-emitter saturation voltage.