Datasheet > 2SB1394

2SB1394

更新时间： 2024-11-22 12:53:39

品牌	Logo	应用领域
TYSEMI		/
页数	文件大小	规格书
2页	105K
描述
Contains input resistance (R1), base-to-emitter resistance (RBE). Low saturation voltage.

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中文翻译

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数据手册

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2SB1394 数据手册

SMD Type

Transistors

Product specification

2SB1394

Features

Contains input resistance (R1), base-to-emitter

resistance (RBE).

Contains diode between collector and emitter.

Low saturation voltage.

Large current capacity.

Small-sized package making it easy to provide highdensity,

small-sized hybrid ICs.

Electrical Connection

Absolute Maximum Ratings Ta = 25

Parameter

Collector-base voltage

Symbol

V^CBO

V^CEO

V^EBO

I^C

Rating

Unit

-40

Collector-emitter voltage

Emitter-base voltage

Collector current

-30

-6

-3

-5

Collector current (pulse)

Collector dissipation

Jumction temperature

Storage temperature

I^CP

P^C*

T^j

1.5

150

T^stg

-55 to +150

* Mounted on ceramic board (250mm²X0.8mm)

http://www.twtysemi.com

sales@twtysemi.com

1of 2

4008-318-123

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