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TY Semiconductor Co., Ltd 更新时间：2023-06-16 05:59:02

台湾TY专注致力于电源管理IC及功率器件（MOSFET）Discrete研发、设计、制造、封装、测试及行销业务。为客户提供完整的解决方案及具价格的竞争优势。产品涵盖电源管理、运算放大器，低压LV MOS管、中压MV MOS管、三极管、高频管等，封装形式覆盖SC-70、SC-70-5、SC70-6、SOT23、SOT23-5、SOT23-6、SOT523、SOT323、SOT363、SOT223、SOT89、SOT252、DFN1010、DFN3*3、DFN5*6、SOP8系列。

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型号	品牌	价格	文档	应用	描述

2SA1588	TYSEMI	获取价格		晶体晶体管开关光电二极管	Excellent hFE linearity.Collector-base voltage VCBO -35 V

2SA1587	TYSEMI	获取价格			High voltage VCEO=-120V High hFE hFE=200 to 700 Small package

2SA1586	TYSEMI	获取价格			High voltage and high current. Excellent hFE linearity. High hFE. Small package.

2SA1579	TYSEMI	获取价格		晶体晶体管光电二极管	High breakdown voltage.Collector-base voltage VCBO -120 V

2SA1577	TYSEMI	获取价格		晶体晶体管光电二极管信息通信管理	Large IC.ICMAX. = -500mA Low VCE(sat). Ideal for low-voltage operation.

2SA1576A	TYSEMI	获取价格			Excellent hFE linearity. Collector-base voltage VCBO -60 V

2SA1575	TYSEMI	获取价格			High fT. High breakdown voltage. Adoption of FBET process.

2SA1566	TYSEMI	获取价格		放大器	Low frequency amplifier. Collector to base voltage VCBO -120 V

2SA1532	TYSEMI	获取价格			High transition frequency fT.Collector-base voltage VCBO -30 V

2SA1531A	TYSEMI	获取价格			Low noise voltage NV. High forward current transfer ratio hFE.

2SA1514K	TYSEMI	获取价格		晶体晶体管光电二极管放大器	High breakdown voltage.Collector-base voltage VCBO -120 V

2SA1484	TYSEMI	获取价格		光电二极管	Collector to base voltage VCBO -90 V Collector to emitter voltage VCEO -90 V

2SA1483	TYSEMI	获取价格		晶体晶体管开关	High Transition Frequency: fT = 200MHz(typ.) Complementary to 2SC3803

2SA1468	TYSEMI	获取价格		晶体放大器晶体管光电二极管	High voltage amplifier. Collector to base voltage VCBO -180 V

2SA1464	TYSEMI	获取价格			High fT: fT=400MHz. Collector-base voltage VCBO -60 V

2SA1463	TYSEMI	获取价格		晶体开关晶体管	High speed,high voltage switching. Low Collector Saturation Voltage

2SA1462	TYSEMI	获取价格		开关	High speed,high voltage switching. High ft:fT=1800MHz TYP. Low Cob:Cob=2.0pF TYP.

2SA1455K	TYSEMI	获取价格		晶体晶体管光电二极管放大器	High breakdown voltage:VCEO=-120V Low noise design:NF=0.2dB(Typ.)

2SA1434	TYSEMI	获取价格			Adoption of FBET process. High DC current gain (hFE=500 to 1200).

2SA1419	TYSEMI	获取价格		晶体晶体管开关	Adoption of FBET, MBIT Processes High Breakdown Voltage and Large Current Capacity

2SA1418	TYSEMI	获取价格			Adoption of FBET, MBIT Processes High Breakdown Voltage and Large Current Capacity

2SA1417	TYSEMI	获取价格			Adoption of FBET, MBIT Processes High Breakdown Voltage and Large Current Capacity

2SA1416	TYSEMI	获取价格		晶体晶体管开关	Adoption of FBET, MBIT Processes High Breakdown Voltage and Large Current Capacity

2SA1415	TYSEMI	获取价格			Adoption of FBET Process High Breakdown Voltage (VCEO = 160V)

2SA1413-Z	TYSEMI	获取价格		晶体晶体管开关	High Voltage: VCEO=-600V High speed:tr 1.0Ã¬s

2SA1411	TYSEMI	获取价格			Very high DC current gain:hFE=500 to 1600. High VEBO Voltage:VEBO=-10V

2SA1400-Z	TYSEMI	获取价格		晶体晶体管开关	High Voltage: VCEO=-400V High speed:tr 1.0Ã¬s

2SA1385-Z	TYSEMI	获取价格		晶体晶体管开关	Low VCE(sat):VCE(sat)=-0.18 V TYP.Collector-base voltage VCBO -60 V

2SA1384	TYSEMI	获取价格		晶体晶体管放大器	High Voltage: VCBO = -300V , VCEO = -300V Complementary to 2SC3515

2SA1369	TYSEMI	获取价格		信息通信管理 PC	High Collector Current (ICM = -3A, IC = -1.5A) High Collector Dissipation PC = 500mW