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2SA1416 PDF预览

2SA1416

更新时间: 2024-11-23 12:53:35
品牌 Logo 应用领域
TYSEMI 晶体晶体管开关
页数 文件大小 规格书
3页 561K
描述
Adoption of FBET, MBIT Processes High Breakdown Voltage and Large Current Capacity

2SA1416 数据手册

 浏览型号2SA1416的Datasheet PDF文件第2页浏览型号2SA1416的Datasheet PDF文件第3页 
Product specification  
2SA1416  
Features  
Adoption of FBET, MBIT Processes  
High Breakdown Voltage and Large Current Capacity  
Fast Switching Time  
Absolute Maximum Ratings Ta = 25  
Parameter  
Collector-Base Voltage  
Collector-Emitter Voltage  
Emitter-Base Voltage  
Symbol  
VCBO  
VCEO  
VEBO  
IC  
Rating  
Unit  
V
-120  
-100  
V
-6  
V
Collector Current  
-1  
-2  
A
Collector Current (Pulse)  
ICP  
A
PC  
500  
mW  
W
Collector Power Dissipation  
PC *  
Tj  
1.3  
Jumction temperature  
150  
Storage temperature Range  
Tstg  
-55 to +150  
* Mounted on ceramic board (250 mm2 x 0.8 mm)  
Electrical Characteristics Ta = 25  
Parameter  
Symbol  
Testconditons  
Min  
Typ  
Max  
-100  
-100  
Unit  
nA  
nA  
V
Collector Cut-off Current  
ICBO  
IEBO  
VCB = -100V , IE = 0  
VEB = -4V , IC = 0  
Emitter Cut-off Current  
Collector-Base Breakdown Voltage  
Collector-Emitter Breakdown Voltage  
Emitter-Base Breakdown Voltage  
DC Current Gain  
V(BR)CBO IC = -10uA , IE = 0  
V(BR)CEO  
-120  
-100  
-6  
V
IC = -1mA , RBE =  
V(BR)EBO IE = -10uA , IC = 0  
V
hFE  
VCE = -5V , IC = -100mA  
100  
400  
-0.6  
Collector-Emitter Saturation Voltage  
Base-Emitter Saturation Voltage  
Gain-Bandwidth Product  
VCE(sat) IC = -400mA , IB = -40mA  
VBE(sat) IC = -400mA , IB = -40mA  
-0.2  
V
V
-0.85 -1.2  
fT  
VCE = -10V , IC = -100mA  
120  
13  
MHz  
pF  
Collector Output Capacitance  
Cob  
VCB = -10V , IE = 0 , f = 1MHz  
Turn-On Time  
Storage Time  
Fall Time  
ton  
tstg  
tf  
80  
700  
40  
See Test Circuit.  
ns  
http://www.twtysemi.com  
1 of 3  
sales@twtysemi.com  
4008-318-123  

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