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2SA1418 PDF预览

2SA1418

更新时间: 2024-02-12 05:08:15
品牌 Logo 应用领域
TYSEMI /
页数 文件大小 规格书
3页 552K
描述
Adoption of FBET, MBIT Processes High Breakdown Voltage and Large Current Capacity

2SA1418 技术参数

生命周期:Transferred包装说明:SMALL OUTLINE, R-PSSO-F3
Reach Compliance Code:unknownECCN代码:EAR99
风险等级:5.44其他特性:HIGH RELIABILITY
外壳连接:COLLECTOR最大集电极电流 (IC):0.7 A
集电极-发射极最大电压:160 V配置:SINGLE
最小直流电流增益 (hFE):200JEDEC-95代码:TO-243
JESD-30 代码:R-PSSO-F3元件数量:1
端子数量:3封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:SMALL OUTLINE
极性/信道类型:PNP功耗环境最大值:1.3 W
认证状态:Not Qualified表面贴装:YES
端子形式:FLAT端子位置:SINGLE
晶体管应用:SWITCHING晶体管元件材料:SILICON
Base Number Matches:1

2SA1418 数据手册

 浏览型号2SA1418的Datasheet PDF文件第2页浏览型号2SA1418的Datasheet PDF文件第3页 
Product specification  
2SA1418  
Features  
Adoption of FBET, MBIT Processes  
High Breakdown Voltage and Large Current Capacity  
Fast Switching Speed  
Absolute Maximum Ratings Ta = 25  
Parameter  
Collector-Base Voltage  
Collector-Emitter Voltage  
Emitter-Base Voltage  
Symbol  
VCBO  
VCEO  
VEBO  
IC  
Rating  
-180  
Unit  
V
-160  
V
-6  
V
Collector Current  
-0.7  
A
Collector Current (Pulse)  
ICP  
-1.5  
A
PC  
500  
mW  
W
Collector Power Dissipation  
PC *  
Tj  
1.3  
Jumction temperature  
150  
Storage temperature Range  
Tstg  
-55 to +150  
* Mounted on ceramic board (250 mm2 x 0.8 mm)  
Electrical Characteristics Ta = 25  
Parameter  
Symbol  
ICBO  
IEBO  
Testconditons  
Min  
Typ  
Max  
-0.1  
-0.1  
Unit  
uA  
uA  
V
Collector Cut-off Current  
VCB = -120V , IE = 0  
VEB = -4V , IC = 0  
Emitter Cut-off Current  
Collector-Base Breakdown Voltage  
Collector-Emitter Breakdown Voltage  
Emitter-Base Breakdown Voltage  
DC Current Gain  
V(BR)CBO IC = -10uA , IE = 0  
V(BR)CEO  
-180  
-160  
-6  
V
IC = -1mA , RBE =  
V(BR)EBO IE = -10uA , IC = 0  
V
hFE  
VCE = -5V , IC = -100mA  
100  
400  
-0.5  
Collector-Emitter Saturation Voltage  
Base-Emitter Saturation Voltage  
Gain-Bandwidth Product  
VCE(sat) IC = -250mA , IB = -25mA  
VBE(sat) IC = -250mA , IB = -25mA  
-0.2  
V
V
-0.85 -1.2  
fT  
VCE = -10V , IC = -50mA  
120  
11  
MHz  
pF  
Collector Output Capacitance  
Cob  
VCB = -10V , IE = 0 , f = 1MHz  
Turn-On Time  
Storage Time  
Fall Time  
ton  
tstg  
tf  
60  
900  
60  
See Test Circuit.  
ns  
1
http://www.twtysemi.com  
1 of 3  
sales@twtysemi.com  
4008-318-123  

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