Datasheet > 2SA1411

2SA1411

更新时间： 2024-11-07 12:53:35

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TYSEMI		/
页数	文件大小	规格书
1页	60K
描述
Very high DC current gain:hFE=500 to 1600. High VEBO Voltage:VEBO=-10V

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2SA1411 数据手册

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TTrraannssiissttIooCrrss

Product specification

2SA1411

SOT-23

Unit: mm

+0.1

-0.1

2.9

0.4

+0.1

-0.1

Features

Very high DC current gain:h^FE=500 to 1600.

High V^EBOVoltage:V^EBO=-10V

+0.1

0.95

-0.1

+0.05

0.1

-0.01

+0.1

-0.1

1.9

1.Base

2.Emitter

3.collector

Absolute Maximum Ratings Ta = 25

Parameter

Collector-base voltage

Collector-emitter voltage

Emitter-base voltage

Symbol

V^CBO

V^CEO

V^EBO

I^C

Rating

-25

Unit

-25

-10

Collector current

-150

Total power dissipation

at 25 ambient temperature

Junction temperature

Storage temperature

P^T

200

T^j

150

T^stg

-55 to +150

Electrical Characteristics Ta = 25

Parameter

Collector cutoff current

Emitter cutoff current

DC current gain *

Symbol

I^CBO

I^EBO

Testconditons

Min

Typ

Max

-100

Unit

V^CB= -25 V, I^E= 0

V^EB= -7 V, I^C= 0

h^FE

V^CE= -5 V, I^C= -1 mA

500 1000 1600

-580

Base-emitter voltage *

Collector-emitter saturation voltage *

Base-emitter saturation voltage *

Gain bandwidth product

Output capacitance

V^BE

V^CE(sat)I^C= -50mA , I^B= -5mA

V^BE(sat)IC = -50mA , IB = -5mA

-0.15 -0.3

-0.8

200

4.6

-1.2

f^T

C^ob

t^on

V^CE= -5V , I^E= 10mA

MHz

V^CB= -5V , I^E= 0 , f = 1.0MHz

V^CC= -10V , V^BE(off)= 2.7V ,

I^C= -50mA ,

Turn-on time

0.12

0.58

0.75

Storage time

t^stg

t^off

Turn-off time

I^B1= -I^B2= -1mA

* PW 350ìs,duty cycle 2%

hFE Classification

Marking

hFE

M15

M16

500 1000

800 1600

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