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TY Semiconductor Co., Ltd 更新时间：2022-05-12 09:11:47

台湾TY专注致力于电源管理IC及功率器件（MOSFET）Discrete研发、设计、制造、封装、测试及行销业务。为客户提供完整的解决方案及具价格的竞争优势。产品涵盖电源管理、运算放大器，低压LV MOS管、中压MV MOS管、三极管、高频管等，封装形式覆盖SC-70、SC-70-5、SC70-6、SOT23、SOT23-5、SOT23-6、SOT523、SOT323、SOT363、SOT223、SOT89、SOT252、DFN1010、DFN3*3、DFN5*6、SOP8系列。

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型号	品牌	价格	文档	应用	描述

2SA1839	TYSEMI	获取价格			Very small-sized package permitting 2SA1839-applied sets to be made small and slim

2SA1832	TYSEMI	获取价格		晶体晶体管光电二极管	High Voltage and High Curren :VCEO=-50V,IC=-150mA(Max.) High hFE: hFE=70 to 400

2SA1815	TYSEMI	获取价格			High power gain:PG=25dB typ(f=100MHz) High power gain:PG=25dB typ(f=100MHz)

2SA1813	TYSEMI	获取价格			Very small-sized package. Adoption of FBET process. High DC current gain (hFE=500 to 1200)

2SA1812	TYSEMI	获取价格			High breakdown voltage. Low saturation voltage.Collector-base voltage VCBO -400 V

2SA1797	TYSEMI	获取价格		晶体晶体管	Low saturation voltage. VCE(sat)=-0.35V(Max.) at IC / IB=-1A/-50mA.

2SA1774	TYSEMI	获取价格		晶体晶体管光电二极管	Excellent hFE linearity. PNP silicon transistor

2SA1772	TYSEMI	获取价格			High breadown voltage Large current capacity (IC=1A)

2SA1766	TYSEMI	获取价格			Adoption of FBET, MBIT processes. Low collector-to-emitter saturation voltage.

2SA1759	TYSEMI	获取价格		开关	High breakdown voltage Low saturation voltage High switching speed

2SA1748	TYSEMI	获取价格		晶体晶体管光电二极管放大器	High transition frequency fT. Small collector output capacitance Cob.

2SA1740	TYSEMI	获取价格		晶体晶体管放大器	High Breakdown Voltage Adoption of MBIT Process Excellent hFE Linearlity.

2SA1739	TYSEMI	获取价格		晶体开关晶体管光电二极管	High speed switching. Low collector-emitter saturation voltage VCE(sat).

2SA1738	TYSEMI	获取价格		开关	High-speed switch Low collector to emitter saturation voltage VCE(sat).

2SA1736	TYSEMI	获取价格		晶体晶体管开关	Low Saturation Voltage: VCE(sat) = -0.5V (max) (IC = -1.5A) Small Flat Package

2SA1735	TYSEMI	获取价格		晶体晶体管开关	Low Saturation Voltage: VCE(sat) = -0.5V (max) (IC = -500mA) Small Flat Package

2SA1734	TYSEMI	获取价格		晶体晶体管开关	Low saturation voltage: VCE( = -0.5 V (max) (IC = -700 mA).Small flat package.

2SA1730	TYSEMI	获取价格			Adoption of FBET , MBIT processes. Low collector-to-emitter saturation voltage.

2SA1729	TYSEMI	获取价格		晶体晶体管开关	Adoption of FBET, MBIT Process. Low Collector-to-Emitter Saturation Voltage.

2SA1724	TYSEMI	获取价格			High fT (fT = 1.5GHz typ). High Current (IC = 300mA). Adoption of FBET process.

2SA1685	TYSEMI	获取价格		晶体开关晶体管光电二极管	Fast switching speed. High gain-bandwidth product. Low saturation voltage.

2SA1682	TYSEMI	获取价格			High breakdown voltage. Small reverse transfer capacitance and excellent high

2SA1681	TYSEMI	获取价格			Low Saturation Voltage: VCE(sat) = -0.5V(max)(IC = -1A) Small Flat Package

2SA1669	TYSEMI	获取价格		晶体晶体管光电二极管放大器	High cutoff frequency : fT=3.0GHz typ. Small noise figure: NF=2.0dB typ (f=0.9GHz)

2SA1664	TYSEMI	获取价格		晶体晶体管 PC	Collector current IC=-0.8A Power dissipation PC=0.5W

2SA1617	TYSEMI	获取价格			Collector-base voltage VCBO -55 V Emitter-base voltage VEBO -5 V

2SA1612	TYSEMI	获取价格			High DC current gain Collector to base voltage VCBO -120 V

2SA1611	TYSEMI	获取价格			High DC Current Gain. High Voltage.Collector-base voltage VCBO -60 V

2SA1608	TYSEMI	获取价格		晶体晶体管开关光电二极管	High fT: fT=400MHz. Collector-base voltage VCBO -60 V

2SA1607	TYSEMI	获取价格		开关	Fast switching speed. High gain-bandwidth product. Low saturation voltage.