Datasheet > 2SA1813

2SA1813

更新时间： 2024-02-18 08:53:01

品牌	Logo	应用领域
TYSEMI		/
页数	文件大小	规格书
1页	71K
描述
Very small-sized package. Adoption of FBET process. High DC current gain (hFE=500 to 1200).

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技术参数
数据手册

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2SA1813 技术参数

生命周期：	Obsolete	包装说明：	,
Reach Compliance Code：	compliant	风险等级：	5.61
Is Samacsys：	N	最大集电极电流 (IC)：	0.15 A
配置：	Single	最小直流电流增益 (hFE)：	500
极性/信道类型：	PNP	最大功率耗散 (Abs)：	0.15 W
子类别：	Other Transistors	表面贴装：	YES
Base Number Matches：	1

2SA1813 数据手册

SMD Type

TransistIoCrs

Product specification

2SA1813

Features

Very small-sized package.

Adoption of FBET process.

High DC current gain (h^FE=500 to 1200).

Low collector-to-emitter saturation voltage

(V^CE(sat)0.3V).

High V^EBO(V^EBO15V).

1 Emitter

2 Base

3 Collector

Absolute Maximum Ratings Ta = 25

Parameter

Collector-base voltage

Collector-emitter voltage

Emitter-base voltage

Collector current

Symbol

V^CBO

V^CEO

V^EBO

I^C

Rating

-30

Unit

-25

-15

-150

Collector current (pulse)

Base current

I^CP

-300

I^B

-30

Collector dissipation

Jumction temperature

Storage temperature

P^C

200

T^j

150

T^stg

-55 to +150

Electrical Characteristics Ta = 25

Parameter

Symbol

Ic^BO

I^EBO

h^FE

Testconditons

Min

500

Typ

Max

-0.1

Unit

ìA

Collector cutoff current

V^CB= -20V , I^E= 0

Emitter cutoff current

V^EB= -10V , I^C= 0

ìA

DC current Gain

V^CE= -5V , I^C= -1mA

VCE = -10V , IC = -10mA

V^CB= -10V , f = 1MHz

800 1200

210

Gain bandwidth product

f^T

MHz

Common base output capacitance

Collector-to-emitter saturation voltage

Base-to-emitter saturation voltage

Collector-to-base breakdown voltage

Collector-to-emitter breakdown voltage

Emitter-to-base breakdown voltage

Cob

2.6

V^CE(sat)I^C= -50mA , I^B=-1mA

V^BE(sat)I^C= -50mA , I^B=-1mA

V^(BR)CBOI^C= -10ìA , I^E= 0

-0.15 -0.3

-0.78 -1.1

-30

-25

-15

V^(BR)CEO

V^(BR)EBOI^E= -10ìA , I^C= 0

I^C= -1mA , R^BE=

Marking

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4008-318-123

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