TYSEMI品牌介绍,TYSEMI产品选型手册大全-捷配DataSheet查询网

您的位置：主页> 品牌列表> TYSEMI

TY Semiconductor Co., Ltd 更新时间：2023-05-16 07:47:41

台湾TY专注致力于电源管理IC及功率器件（MOSFET）Discrete研发、设计、制造、封装、测试及行销业务。为客户提供完整的解决方案及具价格的竞争优势。产品涵盖电源管理、运算放大器，低压LV MOS管、中压MV MOS管、三极管、高频管等，封装形式覆盖SC-70、SC-70-5、SC70-6、SOT23、SOT23-5、SOT23-6、SOT523、SOT323、SOT363、SOT223、SOT89、SOT252、DFN1010、DFN3*3、DFN5*6、SOP8系列。

官网地址 >

型号	品牌	价格	文档	应用	描述

2SB1070A	TYSEMI	获取价格		晶体开关晶体管	Low collector-emitter saturation voltage VCE(sat). High-speed switching.

2SB1027	TYSEMI	获取价格		放大器	Low frequency amplifier Collector to base voltage VCBO -180 V

2SB1025	TYSEMI	获取价格		放大器功率放大器	Low frequency power amplifier Collector to base voltage VCBO -120 V

2SB1002	TYSEMI	获取价格		放大器功率放大器	Low frequency power amplifier Collector to base voltage VCBO -70 V

2SB1001	TYSEMI	获取价格		放大器功率放大器	Low frequency power amplifier Collector to base voltage VCBO -20 V

2SB1000	TYSEMI	获取价格		放大器	Low frequency amplifier. Collector to base voltage VCBO -25 V

KST9012	TYSEMI	获取价格			Excellent hFE liearity Collector Current :IC=-0.5A

2SB798	TYSEMI	获取价格		晶体晶体管放大器	Low collector saturation voltage:VCE(sat)<-0.4V(IC=-1.0A,IB=-100mA)

2SB772	TYSEMI	获取价格		晶体晶体管	PNP transistor High current output up to 3A Low Saturation Voltage

2SB768	TYSEMI	获取价格			High Voltage:VCBO=-150V Collector-to-Base Voltage VCBO -200 V

2SB736	TYSEMI	获取价格			Micro package. Complementary to 2SD780. High DC Current Gain: hFE = 200 TYP.

2SB710A	TYSEMI	获取价格		晶体晶体管光电二极管放大器	Mini type package, allowing downsizing of the equipment and automatic

2SB710	TYSEMI	获取价格			Mini type package, allowing downsizing of the equipment and automatic

2SB649A	TYSEMI	获取价格			Collector-Emitter Voltage :-160V Collector Current :-1.5A

2SA2071	TYSEMI	获取价格		晶体开关晶体管	High speed switching. (Tf : Typ. : 20ns at IC = -3A) Low saturation voltage, typically

2SA2058	TYSEMI	获取价格		晶体开关晶体管光电二极管	High DC current gain: hFE = 200 to 500 (IC = 0.2 A) High-speed switching: tf = 25 ns (typ.

2SA2018	TYSEMI	获取价格			A collector current is large Collector saturation voltage is low. VCE(sat) 250mA

2SA1981SF	TYSEMI	获取价格			High Hfe:.hFE=100 to 320 Collector-base voltage VCBO -35 V

2SA1980UF	TYSEMI	获取价格			Low collector saturation voltage. Low output capacitance.

2SA1978	TYSEMI	获取价格			High gain \|S21e\|2=10.0dB TYP.f=1.0GHz,Vce=-10V,Ic=-15mA

2SA1971	TYSEMI	获取价格		晶体晶体管开关	High voltage: VCE = -400 V Collector-base voltage VCBO -400 V

2SA1954	TYSEMI	获取价格		晶体晶体管开关光电二极管	Low saturation voltage VCE(sat) (1) = -15 mV (typ.)

2SA1948	TYSEMI	获取价格			High fT fT=200MHz typ, low Cob Cob=3.5pF typ Small package for mounting

2SA1947	TYSEMI	获取价格			Excellent linearity of DC forward current gain High collector current Icm=-1.5A

2SA1946	TYSEMI	获取价格		晶体晶体管	Low collector saturation voltage Excellent linearity of DC forward current gain

2SA1944	TYSEMI	获取价格		晶体晶体管	High voltage VCEO=-50V Low collector to emitter saturation voltage

2SA1900	TYSEMI	获取价格			Low saturation voltage, typically VCE(sat) = 0.15V at IC /IB = 500mA / 50mA

2SA1898	TYSEMI	获取价格			Adoption of FBET and MBIT processes. Large current capacity.

2SA1890	TYSEMI	获取价格		晶体晶体管放大器	Low collector-emitter saturation voltage VCE(sat) High collector-emitter voltage (Base ope

2SA1875	TYSEMI	获取价格			High fT : fT=400MHz(typ). High breakdown voltage : VCEO 200V(min).