Datasheet > 2SB649A

2SB649A

更新时间： 2024-11-19 12:53:35

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TYSEMI		/
页数	文件大小	规格书
1页	106K
描述
Collector-Emitter Voltage :-160V Collector Current :-1.5A

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中文翻译

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数据手册

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2SB649A 数据手册

SDMIPDTTyyppee

SMD Type

SDIPDTTyyppee

TransistIoCr

Transistor

IoCr

Product specification

2SB649A

Features

Collector-Emitter Voltage :-160V

Collector Current :-1.5A

1 Emitter

2 Collector

3 Base

Absolute Maximum Ratings Ta = 25

Parameter

Collector-base voltage

Collector-emitter voltage

Emitter-base voltage

Symbol

V^CBO

V^CEO

V^EBO

I^C

Rating

-180

-160

-5

Unit

Collector current

-1.5

Collector power dissipation

Junction temperature

Storage temperature

P^C

T^j

150

T^stg

-55to +150

Electrical Characteristics Ta = 25

Parameter

Symbol

Testconditons

Min

-180

-160

-5

Typ

Max

Unit

Collector-base voltage

Collector-emitter voltage

Emitter-base voltage

V^CBO

V^CEO

V^EBO

I^CBO

I^C=-1mA, I^E=0

I^C=-10mA, R^BE=

I^E=-1mA, I^C=0

Collector cutoff current

Collector-emitter saturation voltage

Base-Emitter Voltage

-10

-1

V^CB=-160V I^E=0

V^CE(sat)I^C=-600mA,I^B=-50mA

V^BE

h^FE

V^CE=5V, I^C=150mA

-1.5

200

V^CE=-5V,I^C=-150mA

V^CE=-5V,I^C=-500mA

VCB = -10 V, IE = 0, f = 1 MHz

V^CE=-5V, I^C=-0.15A

DC current gain

Output capacitance

Transition frequency

Cob

f^T

140

MHz

hFE Classification

Rank

h^FE

60 to 120

100 to 200

4008-318-123

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