Datasheet > 2SB1025

2SB1025

更新时间： 2024-09-19 12:53:39

品牌	Logo	应用领域
TYSEMI		放大器功率放大器
页数	文件大小	规格书
1页	76K
描述
Low frequency power amplifier Collector to base voltage VCBO -120 V

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2SB1025 数据手册

Product specification

2SB1025

Features

Low frequency power amplifier

Absolute Maximum Ratings Ta = 25

Parameter

Collector to base voltage

Collector to emitter voltage

Emitter to base voltage

Collector current

Symbol

V^CBO

V^CEO

V^EBO

I^C

Rating

Unit

-120

-80

-5

-1

peak collector current

Collector power dissipation

Junction temperature

I^CP*¹

P^C*²

-2

150

Storage temperature

T^stg

-55 to +150

*1. PW

10 ms; d

0.02.

*2. Value on the alumina ceramic board (12.5 ×20 ×0.7 mm)

Electrical Characteristics Ta = 25

Parameter

Symbol

V^(BR)CBOI^C= -10 ìA, I^E= 0

V^(BR)CEO

Testconditons

Min

-120

-80

-5

Typ

Max

Unit

Collector to base breakdown voltage

Collector to emitter breakdown voltage

Emitter to base breakdown voltage

Collector cutoff current

I^C= -1 mA, R^BE=

V^(BR)EBOI^E= -10 ìA, I^C= 0

I^CBO

h^FE

V^CB= -100V, I^E= 0

-10

320

-1

ìA

DC current transfer ratio

V^CE= -5 V,I^C= -150 mA

Collector to emitter saturation voltage

Base to emitter voltage

V^CE(sat)I^C= -500 mA,I^B= -50 mA

V^BE

f^T

V^CE= -5 V,I^B= -150 mA

V^CE= -5 V,I^C= -150 mA

V^CB= -10 V, I^E= 0,f = 1 MHz

-0.9

Gain bandwidth product

140

MHz

Collector output capacitance

C^ob

hFE Classification

Marking

hFE

160 320

60 120

100 200

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