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2SB1027 PDF预览

2SB1027

更新时间: 2024-11-24 12:53:39
品牌 Logo 应用领域
TYSEMI 放大器
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1页 75K
描述
Low frequency amplifier Collector to base voltage VCBO -180 V

2SB1027 数据手册

  
Product specification  
2SB1027  
Features  
Low frequency amplifier  
Absolute Maximum Ratings Ta = 25  
Parameter  
Collector to base voltage  
Collector to emitter voltage  
Emitter to base voltage  
Collector current  
Symbol  
VCBO  
VCEO  
VEBO  
IC  
Rating  
-180  
-160  
-5  
Unit  
V
V
V
-1.5  
A
Collector peak current  
Collector power dissipation  
Junction temperature  
iC(peak)*1  
PC*2  
Tj  
-3  
A
1
W
150  
Storage temperature  
Tstg  
-55 to 150  
*1 PW  
10 ms, Duty cycle  
20%  
*2 Value on the alumina ceramic board (12.5X 20X 0.7 mm)  
Electrical Characteristics Ta = 25  
Parameter  
Symbol  
V(BR)CBO  
V(BR)CEO  
V(BR)EBO  
ICBO  
Testconditons  
Min  
Typ  
Max  
Unit  
V
Collector to base breakdown voltage  
Collector to emitter breakdown voltage  
Emitter to base breakdown voltage  
Collector cutoff current  
IC = -1 mA, IE = 0  
-180  
-120  
-5  
V
IC = -10 mA, RBE =  
IE = -1 mA, IC = 0  
V
VCB = -160 V, IE = 0  
VCE = -5 V, IC = -0.15 A,  
VCE = -5 V, IC = -0.5 A,  
IC = -0.5 A, IB = -50 mA,  
VCE = -5 V, IC = -0.15 A,  
-10  
ìA  
60  
30  
320  
DC current transfer ratio  
hFE  
Collector to emitter saturation voltage  
Base to emitter voltage  
VCE(sat)  
VBE  
-1.0  
-0.9  
V
V
hFE Classification  
Marking  
hFE  
EH  
EJ  
EK  
60 to 120  
100 to 200  
160 to 320  
http://www.twtysemi.com  
1 of 1  
sales@twtysemi.com  
4008-318-123  

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