Datasheet > 2SB1001

2SB1001

更新时间： 2024-09-18 12:53:39

品牌	Logo	应用领域
TYSEMI		放大器功率放大器
页数	文件大小	规格书
1页	75K
描述
Low frequency power amplifier Collector to base voltage VCBO -20 V

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2SB1001 数据手册

Product specification

2SB1001

Features

Low frequency power amplifier

Absolute Maximum Ratings Ta = 25

Parameter

Collector to base voltage

Collector to emitter voltage

Emitter to base voltage

Collector current

Symbol

V^CBO

V^CEO

V^EBO

I^C

Rating

Unit

-20

-16

-6

-2

peak collector current

Collector power dissipation

Junction temperature

I^CP*¹

P^C*²

-3

150

Storage temperature

T^stg

-55 to +150

*1. PW

10 ms; d

0.02.

*2. Value on the alumina ceramic board (12.5 X 20 X 0.7 mm)

Electrical Characteristics Ta = 25

Parameter

Symbol

V^(BR)CBOI^C= -10 ìA, I^E= 0

V^(BR)CEO

Testconditons

Min

-20

-16

-6

Typ

Max

Unit

Collector to base breakdown voltage

Collector to emitter breakdown voltage

Emitter to base breakdown voltage

Collector cutoff current

I^C= -1 mA, R^BE=

V^(BR)EBOI^E= -10 ìA, I^C= 0

I^CBO

I^EBO

h^FE

V^CB= -16 V, I^E= 0

V^EB= -5 V, I^C= 0

-0.1

320

ìA

Emitter cutoff current

DC current transfer ratio

V^CE= -2 V,I^C= -0.1 A

100

Collector to emitter saturation voltage

Base to emitter saturation voltage

Gain bandwidth product

V^CE(sat)I^C= -1 A,I^B= -0.1 A

V^BE(sat)I^C= -1 A,I^B= -0.1 A

-0.15 -0.3

-1

150

-1.2

f^T

V^CE= -2 V,I^C= -10 mA

MHz

Collector output capacitance

C^ob

V^CB= -10 V, I^E= 0,f = 1 MHz

hFE Classification

Marking

hFE

100 200

160 320

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sales@twtysemi.com

4008-318-123

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