Datasheet > 2SA1832

2SA1832

更新时间： 2024-11-15 12:53:35

品牌	Logo	应用领域
TYSEMI		晶体晶体管光电二极管
页数	文件大小	规格书
1页	69K
描述
High Voltage and High Curren :VCEO=-50V,IC=-150mA(Max.) High hFE: hFE=70 to 400

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数据手册

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2SA1832 数据手册

SMD Type

TransistIoCrs

Product specification

2SA1832

SOT-523

+0.1

-0.1

Unit: mm

1.6

1.0

+0.1

-0.1

Features

+0.05

0.2

-0.05

+0.01

0.1

-0.01

High Voltage and High Curren :VCEO=-50V,IC=-150mA(Max.)

Excellent hFE Linearity :

hFE (IC=-0.1mA/ hFE(IC=-2mA)=0.95(Typ.)

High hFE: hFE=70 to 400

+0.25

0.3

-0.05

+0.1

0.5

-0.1

1. Base

2. Emitter

3. Collecter

Absolute Maximum Ratings Ta = 25

Parameter

Collector-base voltage

Symbol

VCBO

VCEO

VEBO

Rating

-50

Unit

Collector-emitter voltage

Emitter-base voltage

Collector current

-50

-5

-150

-30

Base current

Collector power dissipation

Jumction temperature

Storage temperature

100

125

Tstg

-55 to +125

Electrical Characteristics Ta = 25

Parameter

Symbol

Testconditons

VCB = -5V , IE = 0

Min

Typ

Max

-0.1

400

-0.3

Unit

Collector cutoff current

Emitter cutoff current

IcBO

IEBO

hFE

VEB = -5V , IC = 0

DC current Gain

VCE = -6V , IC = -2mA

Collector-emitter saturation voltage

Collector Output Capacitance

Transition frequency

VCE(sat) IC = -100mA , IB = -10mA

-0.1

Cob

VCB=-10V,IE=0,f=1MHz

VCE=-10V,IC=-1mA

MHz

hFE Classification

Marking

Rank

hFE

70 140

120 240

200 400

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4008-318-123

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