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2SA1611 PDF预览

2SA1611

更新时间: 2024-11-11 12:53:35
品牌 Logo 应用领域
TYSEMI /
页数 文件大小 规格书
1页 72K
描述
High DC Current Gain. High Voltage.Collector-base voltage VCBO -60 V

2SA1611 数据手册

  
Product specification  
2SA1611  
Features  
High DC Current Gain.  
High Voltage.  
1 Emitter  
2 Base  
3 Collector  
Absolute Maximum Ratings Ta = 25  
Parameter  
Collector-base voltage  
Collector-emitter voltage  
Emitter-base voltage  
Collector current  
Symbol  
VCBO  
VCEO  
VEBO  
IC  
Rating  
-60  
Unit  
V
-50  
V
-5  
V
-100  
mA  
mW  
Total power dissipation  
Junction temperature  
Storage temperature  
PT  
150  
Tj  
150  
Tstg  
-55 to +150  
Electrical Characteristics Ta = 25  
Parameter  
Collector cutoff current  
Emitter cutoff current  
DC current gain *  
Symbol  
Testconditons  
VCB = -60V, IE=0  
Min  
90  
Typ  
200  
Max  
-0.1  
-0.1  
600  
Unit  
ìA  
ICBO  
IEBO  
hFE  
VEB = -5V, IC=0  
ìA  
VCE = -6V , IC = -1mA  
Collector-emitter saturation voltage  
Base-emitter voltage  
Gain bandwidth product  
Output capacitance  
VCE(sat) IC = -100mA , IB = -10mA  
-0.18 -0.3  
V
V
VBE  
fT  
VCE = -6V , IC = 1mA  
VCE = -6V , IE = 10mA  
-0.58 -0.62 -0.68  
180  
4.5  
MHz  
pF  
Cob  
VCB = -10V , IE = 0 , f = 1.0MHz  
* Pulse test: tp  
300 ìs; d  
0.02.  
hFE Classification  
Marking  
hFE  
M4  
90 180  
M5  
135 270  
M6  
M7  
200 400  
300 600  
http://www.twtysemi.com  
1 of 1  
sales@twtysemi.com  
4008-318-123  

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