Datasheet > 2SA1579

2SA1579

更新时间： 2024-11-20 12:53:35

品牌	Logo	应用领域
TYSEMI		晶体晶体管光电二极管
页数	文件大小	规格书
1页	79K
描述
High breakdown voltage.Collector-base voltage VCBO -120 V

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2SA1579 数据手册

SMD Type

Transistors

Product specification

2SA1579

Features

High breakdown voltage.

1 Emitter

2 Base

3 Collector

Absolute Maximum Ratings Ta = 25

Parameter

Collector-base voltage

Collector-emitter voltage

Emitter-base voltage

Symbol

V^CBO

V^CEO

V^EBO

I^C

Rating

-120

Unit

-120

-5

Collector current

-50

Collector power dissipation

Junction temperature

Storage temperature

P^C

0.2

150

T^stg

-55 to +150

Electrical Characteristics Ta = 25

Parameter

Symbol

Testconditons

Min

-120

-5

Typ

Max

Unit

Collector-base breakdown voltage

Collector-emitter breakdown voltage

Emitter-base breakdown voltage

Collector cutoff current

BV^CBOI^C=-50ìA

BV^CEOI^C=-1mA

BV^EBOI^E=-50ìA

I^CBO

I^EBO

V^CE(sat)I^C=-10mA, I^B=-1mA

V^CB=-100V

-0.5

560

ìA

Emitter cutoff current

V^EB=-4V

Collector-emitter saturation voltage

DC current transfer ratio

Output capacitance

hFE

f^T

VCE=-6V, IC=-2mA

180

V^CE=-12V, I^E= 2mA, f=100MHz

V^CB=-12V, I^E=0A, f=1MHz

140

3.2

MHz

Transition frequency

C^ob

hFE Classification

Marking

Rank

hFE

180 390

270 560

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