Datasheet > 2SA1417

2SA1417

更新时间： 2024-11-09 12:53:35

品牌	Logo	应用领域
TYSEMI		/
页数	文件大小	规格书
3页	565K
描述
Adoption of FBET, MBIT Processes High Breakdown Voltage and Large Current Capacity

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数据手册

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2SA1417 数据手册

SMD Type

Product specification

2SA1417

Features

Adoption of FBET, MBIT Processes

High Breakdown Voltage and Large Current Capacity

Absolute Maximum Ratings Ta = 25

Parameter

Collector-Base Voltage

Collector-Emitter Voltage

Emitter-Base Voltage

Symbol

V^CBO

V^CEO

V^EBO

I^C

Rating

Unit

-120

-100

-6

Collector Current

-2

-3

Collector Current (Pulse)

I^CP

P^C

500

Collector Power Dissipation

P^{C *}

T^j

1.5

Jumction temperature

150

Storage temperature Range

T^stg

-55 to +150

* Mounted on ceramic board (250 mm²x 0.8 mm)

Electrical Characteristics Ta = 25

Parameter

Symbol

I^CBO

I^EBO

Testconditons

Min

Typ

Max

-100

Unit

Collector Cut-off Current

V^CB= -100V , I^E= 0

V^EB= -4V , I^C= 0

Emitter Cut-off Current

Collector-Base Breakdown Voltage

Collector-Emitter Breakdown Voltage

Emitter-Base Breakdown Voltage

DC Current Gain

V^(BR)CBOI^C= -10uA , I^E= 0

V^(BR)CEO

-120

-100

-6

I^C= -1mA , R^BE=

V^(BR)EBOI^E= -10uA , I^C= 0

h^FE

V^CE= -5V , I^C= -100mA

100

400

Collector-Emitter Saturation Voltage

Base-Emitter Saturation Voltage

Gain-Bandwidth Product

V^CE(sat)I^C= -1A , I^B= -100mA

V^BE(sat)I^C= -1A , I^B= -100mA

-0.22 -0.6

-0.85 -1.2

120

f^T

V^CE= -10V , I^C= -100mA

MHz

Collector Output Capacitance

C^ob

V^CB= -10V , I^E= 0 , f = 1MHz

Turn-On Time

Storage Time

Fall Time

t^on

tstg

t^f

750

See Test Circuit.

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