Datasheet > 2SA1419

2SA1419

更新时间： 2024-11-18 12:53:35

品牌	Logo	应用领域
TYSEMI		晶体晶体管开关
页数	文件大小	规格书
3页	576K
描述
Adoption of FBET, MBIT Processes High Breakdown Voltage and Large Current Capacity

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2SA1419 数据手册

SMD Type

Product specification

2SA1419

Features

Adoption of FBET, MBIT Processes

High Breakdown Voltage and Large Current Capacity

Absolute Maximum Ratings Ta = 25

Parameter

Collector-Base Voltage

Collector-Emitter Voltage

Emitter-Base Voltage

Symbol

V^CBO

V^CEO

V^EBO

I^C

Rating

-180

Unit

-160

-6

Collector Current

-1.5

Collector Current (Pulse)

I^CP

-2.5

P^C

500

Collector Power Dissipation

P^{C *}

T^j

1.5

Jumction temperature

150

Storage temperature Range

T^stg

-55 to +150

* Mounted on ceramic board (250 mm²x 0.8 mm)

Electrical Characteristics Ta = 25

Parameter

Symbol

I^CBO

I^EBO

Testconditons

Min

Typ

Max

-1

Unit

Collector Cut-off Current

V^CB= -120V , I^E= 0

V^EB= -4V , I^C= 0

Emitter Cut-off Current

-1

Collector-Base Breakdown Voltage

Collector-Emitter Breakdown Voltage

Emitter-Base Breakdown Voltage

V^(BR)CBOI^C= -10uA , I^E= 0

V^(BR)CEO

-180

-160

-6

I^C= -1mA , R^BE=

V^(BR)EBOI^E= -10uA , I^C= 0

V^CE= -5V , I^C= -100mA

VCE = -5V , IC = -10mA

100

400

-0.5

DC Current Gain

h^FE

Collector-Emitter Saturation Voltage

Base-Emitter Saturation Voltage

Gain-Bandwidth Product

V^CE(sat)I^C= -500mA , I^B= -50mA

V^BE(sat)I^C= -500mA , I^B= -50mA

-0.2

-0.85 -1.2

f^T

V^CE= -10V , I^C= -50mA

120

MHz

Collector Output Capacitance

C^ob

V^CB= -10V , I^E= 0 , f = 1MHz

Turn-On Time

Storage Time

Fall Time

t^on

t^stg

t^f

0.7

See Test Circuit.

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