Datasheet > 2SA1415

2SA1415

更新时间： 2024-11-19 12:53:35

品牌	Logo	应用领域
TYSEMI		/
页数	文件大小	规格书
3页	470K
描述
Adoption of FBET Process High Breakdown Voltage (VCEO = 160V)

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2SA1415 数据手册

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Product specification

2SA1415

Features

Adoption of FBET Process

High Breakdown Voltage (VCEO = 160V)

Excellent Linearlity of h^FEand Small C^ob

Fast Switching Speed

Absolute Maximum Ratings Ta = 25

Parameter

Collector-Base Voltage

Collector-Emitter Voltage

Emitter-Base Voltage

Symbol

V^CBO

V^CEO

V^EBO

I^C

Rating

-180

Unit

-160

-5

Collector Current

-140

Collector Current (Pulse)

I^CP

-200

P^C

500

Collector Power Dissipation

P^{C *}

T^j

1.3

Jumction temperature

150

Storage temperature Range

T^stg

-55 to +150

* Mounted on ceramic board (250 mm²x 0.8 mm)

Electrical Characteristics Ta = 25

Parameter

Symbol

ICBO

Testconditons

Min

100

Typ

Max

-100

400

Unit

Collector Cut-off Current

Emitter Cut-off Current

DC Current Gain

VCB = -80V , IE = 0

V^EB= -4V , I^C= 0

I^EBO

h^FE

V^CE= -5V , I^C= -10mA

Collector-Emitter Saturation Voltage

Gain-Bandwidth Product

Collector Output Capacitance

VCE(sat) IC = -50mA , IB = -5mA

-0.14 -0.4

f^T

V^CE= -10V , I^C= -10mA

150

MHz

C^ob

V^CB= -10V , I^E= 0 , f = 1MHz

Turn-On Time

Storage Time

Fall Time

t^on

t^stg

t^f

0.1

1.5

0.1

See Test Circuit.

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与2SA1415相关器件

型号	品牌	获取价格	描述	数据表
2SA1415_15	KEXIN	获取价格	PNP Transistors
2SA1415-HF_15	KEXIN	获取价格	PNP Transistors
2SA1415R	ETC	获取价格	TRANSISTOR \| BJT \| PNP \| 160V V(BR)CEO \| 140MA I(C) \| SOT-89
2SA1415-R	KEXIN	获取价格	PNP Transistors
2SA1415-R-HF	KEXIN	获取价格	PNP Transistors
2SA1415S	ETC	获取价格	TRANSISTOR \| BJT \| PNP \| 160V V(BR)CEO \| 140MA I(C) \| SOT-89
2SA1415-S	KEXIN	获取价格	PNP Transistors
2SA1415-S-HF	KEXIN	获取价格	PNP Transistors
2SA1415T	ETC	获取价格	TRANSISTOR \| BJT \| PNP \| 160V V(BR)CEO \| 140MA I(C) \| SOT-89
2SA1415-T	KEXIN	获取价格	PNP Transistors