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2SA1514K

更新时间: 2024-11-02 12:53:35
品牌 Logo 应用领域
TYSEMI 晶体晶体管光电二极管放大器
页数 文件大小 规格书
1页 51K
描述
High breakdown voltage.Collector-base voltage VCBO -120 V

2SA1514K 数据手册

  
Product specification  
2SA1514K  
SOT-23  
Unit: mm  
+0.1  
-0.1  
2.9  
0.4  
+0.1  
-0.1  
3
Features  
High breakdown voltage.  
1
2
+0.1  
0.95  
-0.1  
+0.05  
0.1  
-0.01  
+0.1  
-0.1  
1.9  
1.Base  
2.Emitter  
3.collector  
Absolute Maximum Ratings Ta = 25  
Parameter  
Collector-base voltage  
Collector-emitter voltage  
Emitter-base voltage  
Symbol  
VCBO  
VCEO  
VEBO  
IC  
Rating  
-120  
Unit  
V
-120  
V
-5  
V
Collector current  
-50  
mA  
W
Collector power dissipation  
Junction temperature  
Storage temperature  
PC  
0.2  
Tj  
150  
Tstg  
-55 to +150  
Electrical Characteristics Ta = 25  
Parameter  
Symbol  
Testconditons  
Min  
Typ  
Max  
Unit  
V
Collector-base breakdown voltage  
Collector-emitter breakdown voltage  
Emitter-base breakdown voltage  
Collector cutoff current  
BVCBO IC=-50ìA  
BVCEO IC=-1mA  
BVEBO IE=-50ìA  
-120  
-120  
-5  
V
V
ICBO  
IEBO  
VCE(sat) IC=-10mA, IB=-1mA  
hFE VCE=-6V, IC=-2mA  
fT  
VCB=-100V  
-0.5  
-0.5  
-0.5  
560  
ìA  
ìA  
V
Emitter cutoff current  
VEB=-4V  
Collector-emitter saturation voltage  
DC current transfer ratio  
Output capacitance  
180  
VCE=-12V, IE= 2mA, f=100MHz  
VCB=-12V, IE=0A, f=1MHz  
140  
3.2  
MHz  
pF  
Transition frequency  
Cob  
hFE Classification  
Marking  
Rank  
RR  
R
RS  
S
hFE  
180 390  
270 560  
http://www.twtysemi.com  
1 of 1  
sales@twtysemi.com  
4008-318-123  

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