Datasheet > 2SB1397

2SB1397

更新时间： 2024-11-22 12:53:39

品牌	Logo	应用领域
TYSEMI		晶体二极管晶体管
页数	文件大小	规格书
1页	76K
描述
Low saturation voltage. Contains diode between collector and emitter.

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2SB1397 数据手册

Product specification

2SB1397

Features

Low saturation voltage.

Contains diode between collector and emitter.

Contains bias resistance between base and emitter.

Large current capacity.

Small-sized package making it easy to provide highdensity,

small-sized hybrid ICs.

Absolute Maximum Ratings Ta = 25

Parameter

Collector-base voltage

Symbol

Rating

Unit

V^CBO

V^CEO

V^EBO

I^C

-25

Collector-emitter voltage

Emitter-base voltage

Collector current

-20

-6

-2

-4

Collector current (pulse)

Collector dissipation

Jumction temperature

Storage temperature

I^CP

P^C*

T^j

1.3

150

T^stg

-55 to +150

* Mounted on ceramic board (250mm²X0.8mm)

Electrical Characteristics Ta = 25

Parameter

Symbol

I^CBO

Testconditons

Min

Typ

Max

-1

Unit

Collector cutoff current

V^CB= -20V , I^E= 0

V^CE= -2V , I^C= -0.5A

V^CE= -2V , I^C= -2A

V^CE= -2V , I^C= -0.5A

V^CB= -10V , f = 1MHz

I^C= -1A , I^B= -50mA

I^C= -10ìA , I^E= 0

I^C= -10ìA , R^BE=

I^C= -10mA , R^BE=

I^F=0.5A

DC current Gain

h^FE

Gain bandwidth product

f^T

300

MHz

Output capacitance

C^ob

Collector-emitter saturation voltage

Base-emitter saturation voltage

Collector-to-base breakdown voltage

V^CE(sat)

V^BE(sat)

V^(BR)CBO

-0.25 -0.5

-1.5

-25

-20

Collector-to-emitter breakdown voltage

Diode forward voltage

V^(BR)CEO1

V^(BR)CEO2

V^F

-1.5

1.6

Base-emitter resistance

R^BE

KÙ

Marking

http://www.twtysemi.com

1 of 1

sales@twtysemi.com

4008-318-123

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