TY Semiconductor Co., Ltd 更新时间:2020-02-09 19:52:32
台湾TY专注致力于电源管理IC及功率器件(MOSFET)Discrete研发、设计、制造、封装、测试及行销业务。为客户提供完整的解决方案及具价格的竞争优势。产品涵盖电源管理、运算放大器,低压LV MOS管、中压MV MOS管、三极管、高频管等,封装形式覆盖SC-70、SC-70-5、SC70-6、SOT23、SOT23-5、SOT23-6、SOT523、SOT323、SOT363、SOT223、SOT89、SOT252、DFN1010、DFN3*3、DFN5*6、SOP8系列。
型号 | 品牌 | 价格 | 文档 | 应用 | 描述 | |
2SC4117 | TYSEMI | 获取价格 | ![]() |
晶体晶体管光电二极管放大器 | High voltage High hFE Low noise Small package | |
2SC4115 | TYSEMI | 获取价格 | ![]() |
晶体晶体管 | Low VCE(sat):VCE(sat) = 0.2V (Typ.) NPN silicon transistor | |
2SC4104 | TYSEMI | 获取价格 | ![]() |
晶体晶体管开关光电二极管 | High fT. Small reverse transfer capacitance. Adoption of FBET process. | |
2SC4102 | TYSEMI | 获取价格 | ![]() |
晶体晶体管光电二极管 | High breakdown voltage.(VCEO = 120V) | |
2SC4098 | TYSEMI | 获取价格 | ![]() |
晶体晶体管光电二极管放大器 | Low collector capacitance. (Cob : Typ. 1.3pF) noise characteristics. | |
2SC4097 | TYSEMI | 获取价格 | ![]() |
信息通信管理 | High ICMax. ICMax. = 0.5A Low VCE(sat). Optimal for low voltage operation. | |
2SC4080 | TYSEMI | 获取价格 | ![]() |
High Ft High breakdown voltage Small reverse transfer capacitance excellent | ||
2SC4061K | TYSEMI | 获取价格 | ![]() |
晶体晶体管光电二极管放大器 | High breakdown voltage. Low collector output capacitance. Ideal for chroma circuit. | |
2SC4027 | TYSEMI | 获取价格 | ![]() |
晶体晶体管开关 | High voltage and large current capcity Adoption of MBIT process Fast switohing time | |
2SC3936 | TYSEMI | 获取价格 | ![]() |
射频 | Optimum for RF amplification, oscillation, mixing, and IF of FM/AM radios. | |
2SC3930 | TYSEMI | 获取价格 | ![]() |
晶体晶体管射频光电二极管ISM频段放大器 | Optimum for RF amplification of FM/AM radios. High transition frequency fT. | |
2SC3929A | TYSEMI | 获取价格 | ![]() |
Low noise voltage NV. High forward current transfer ratio hFE. | ||
2SC3906K | TYSEMI | 获取价格 | ![]() |
High breakdown voltage.Collector-base voltage VCBO 120 V | ||
2SC3837K | TYSEMI | 获取价格 | ![]() |
晶体晶体管光电二极管放大器 | High transition frequency. (Typ. fT = 1.5GHz) Small rbb.Cc and high gain. (Typ. 6ps) | |
2SC3736 | TYSEMI | 获取价格 | ![]() |
晶体开关晶体管 | High speed,high voltage switching. Low collector saturation voltage. | |
2SC3734 | TYSEMI | 获取价格 | ![]() |
High speed : tstg 200ns. Collector-base voltage VCBO 60 V | ||
2SC3728 | TYSEMI | 获取价格 | ![]() |
晶体晶体管PC | High hFE=150 to 800. High collector dissipation Pc=500mW. Small package for mounting. | |
2SC3707 | TYSEMI | 获取价格 | ![]() |
Possible with the small current and low voltage High transition frequency fT | ||
2SC3689 | TYSEMI | 获取价格 | ![]() |
Small Cob (Cob=1.5pF typ). Low collector-to-emitter saturation voltage (VCE(sat) 0.5V). | ||
2SC3663 | TYSEMI | 获取价格 | ![]() |
晶体晶体管光电二极管放大器 | Low-voltage, low-current, low-noise and high-gain Gold electrode gives high reliability. | |
2SC3661 | TYSEMI | 获取价格 | ![]() |
驱动器放大器 | Low frequency general-purpose amplifiers, drivers, muting circuit. | |
2SC3651 | TYSEMI | 获取价格 | ![]() |
High DC current gain High breakdown voltage Low colleotor-to- emitter saturation voltage | ||
2SC3650 | TYSEMI | 获取价格 | ![]() |
晶体晶体管放大器 | High DC current gain (hFE=800 to 3200). Low collector-to-emitter saturation voltage | |
2SC3648 | TYSEMI | 获取价格 | ![]() |
晶体晶体管开关 | Adoption of FBET, MBIT Processes High Breakdown Voltage and Large Current Capacity | |
2SC3647 | TYSEMI | 获取价格 | ![]() |
Adoption of FBET, MBIT Processes High Breakdown Voltage and Large Current Capacity | ||
2SC3646 | TYSEMI | 获取价格 | ![]() |
晶体晶体管开关 | Adoption of FBET, MBIT Processes High Breakdown Voltage and Large Current Capacity | |
2SC3645 | TYSEMI | 获取价格 | ![]() |
Adoption of FBET Process High Breakdown Voltage (VCEO = 160V) | ||
2SC3624 | TYSEMI | 获取价格 | ![]() |
High DC current Gain: hFE = 1000 to 3200. Low VCE(sat): (VCE(sat) = 0.07 V TYP). | ||
2SC3618 | TYSEMI | 获取价格 | ![]() |
晶体晶体管开关 | World standard miniature package.Collector-base voltage VCBO 25 V | |
2SC3617 | TYSEMI | 获取价格 | ![]() |
晶体晶体管开关 | World standard miniature package. High hFE hFE=800 to 1600. |
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