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TY Semiconductor Co., Ltd 更新时间：2020-03-08 20:11:22

台湾TY专注致力于电源管理IC及功率器件（MOSFET）Discrete研发、设计、制造、封装、测试及行销业务。为客户提供完整的解决方案及具价格的竞争优势。产品涵盖电源管理、运算放大器，低压LV MOS管、中压MV MOS管、三极管、高频管等，封装形式覆盖SC-70、SC-70-5、SC70-6、SOT23、SOT23-5、SOT23-6、SOT523、SOT323、SOT363、SOT223、SOT89、SOT252、DFN1010、DFN3*3、DFN5*6、SOP8系列。

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型号	品牌	价格	文档	应用	描述

2SD2318	TYSEMI	获取价格			High DC current gain. Low saturation voltage.Collector-base voltage VCBO 80 V

2SD2228	TYSEMI	获取价格		晶体晶体管光电二极管放大器	High dc current. Low collector saturation voltage.Collector-base voltage VCBO 25 V

2SD2210	TYSEMI	获取价格		晶体晶体管开关光电二极管	Low collector-emitter saturation voltage VCE(sat) High forward current transfer ratio hFE.

2SD2201	TYSEMI	获取价格			Surface mount type device making the following possible. Large current capacity.

2SD2200	TYSEMI	获取价格		晶体晶体管开关	Surface mount type device making the following possible. Large current capacity.

2SD2199	TYSEMI	获取价格			Surface mount type device making the following possible. Low collector-to-emitter saturati

2SD2198	TYSEMI	获取价格			Surface mount type device making the following possible. Low collector-to-emitter saturati

2SD2185	TYSEMI	获取价格			Low collector-emitter saturation voltage VCE(sat). the magazine packing.

2SD2153	TYSEMI	获取价格		晶体晶体管放大器	Low saturation voltage. Excellent DC current gain characteristics.

2SD2150	TYSEMI	获取价格		晶体晶体管	Low VCE(sat). Excellent DC current gain characteristics. NPN silicon transistor.

2SD2122S	TYSEMI	获取价格		晶体放大器晶体管功率放大器	Low frequency power amplifier. Collector to base voltage VCBO 180 V

2SD2121S	TYSEMI	获取价格		晶体放大器晶体管功率放大器	Low frequency power amplifier. Collector to base voltage VCBO 35 V

2SD2118	TYSEMI	获取价格		晶体晶体管	Low VCE(sat). Excellent DC current gain characteristics. NPN silicon transistor.

2SD2115S	TYSEMI	获取价格			Low frequency power amplifier.Collector to base voltage VCBO 150 V

2SD2098	TYSEMI	获取价格		晶体晶体管	Low VCE(sat). Excellent DC current gain characteristics. NPN silicon transistor.

2SD1999	TYSEMI	获取价格		晶体二极管晶体管	Low saturation voltage. Contains diode between collector and emitter.

2SD1998	TYSEMI	获取价格		晶体二极管晶体管	Low saturation voltage. Contains diode between collector and emitter.

2SD1997	TYSEMI	获取价格		二极管	Contains diode between collector and emitter. Low saturation voltage.

2SD1979	TYSEMI	获取价格			Low on resistance ron. High forward current transfer ratio hFE.

2SD1963	TYSEMI	获取价格		晶体晶体管开关	Low saturation voltage. Excellent DC current gain characteristics.

2SD1950	TYSEMI	获取价格		晶体晶体管开关	High dc current gain and good hFE. Low collector saturation voltage. High VEBO.

2SD1949	TYSEMI	获取价格			High current.(IC=5A) Low saturation voltage, typically VCE(sat)=0.1V at IC / IB=150mA

2SD1935	TYSEMI	获取价格			Large current capacity. Low collector to emitter saturation voltage.

2SD1918	TYSEMI	获取价格			High breakdown voltage.(BVCEO = 160V) High transition frequency.(fT = 80MHZ)

2SD1899-Z	TYSEMI	获取价格		晶体晶体管开关	Low VCE(sat). High hFE.Collector-base voltage VCBO 60 V

2SD1824	TYSEMI	获取价格			High forward current transfer ratio hFE Low collector-emitter saturation voltage VCE(sat)

2SD1823	TYSEMI	获取价格			High forward current transfer ratio hFE. Low collector-emitter saturation voltage VCE(sat)

2SD1821	TYSEMI	获取价格			High collector-emitter voltage VCEO Low noise voltage NV

2SD1821A	TYSEMI	获取价格			High collector-emitter voltage VCEO Low noise voltage NV

2SD1820A	TYSEMI	获取价格		晶体晶体管光电二极管放大器	Low collector-emitter saturation voltage VCE(sat).