Datasheet > 2SD1999

2SD1999

更新时间： 2024-10-14 12:53:43

品牌	Logo	应用领域
TYSEMI		晶体二极管晶体管
页数	文件大小	规格书
1页	150K
描述
Low saturation voltage. Contains diode between collector and emitter.

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数据手册

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2SD1999 数据手册

SMD Type

TransistIoCrs

Product specification

2SD1999

Features

Low saturation voltage.

Contains diode between collector and emitter.

Contains bias resistance between base and emitter.

Large current capacity.

Small-sized package making it easy to provide highdensity,

small-sized hybrid ICs.

Absolute Maximum Ratings Ta = 25

Parameter

Collector-base voltage

Symbol

Rating

Unit

V^CBO

V^CEO

V^EBO

I^C

Collector-emitter voltage

Emitter-base voltage

Collector current

Collector current (pulse)

Collector dissipation

Jumction temperature

Storage temperature

I^CP

1.5

P^C

T^j

150

T^stg

-55 to +150

Electrical Characteristics Ta = 25

Parameter

Symbol

Ic^BO

Testconditons

Min

Typ

Max

1.0

Unit

ìA

Collector cutoff current

V^CB= 20V , I^E= 0

V^CE= 2V , I^C= 0.5A

V^CE= 2V , I^C= 3A

VCE = 2V , IC = 0.5A

V^CB= 10V , f = 1MHz

DC current Gain

h^FE

Gain bandwidth product

200

MHz

Output capacitance

C^ob

Collector-emitter saturation voltage

Base-emitter saturation voltage

Collector-to-base breakdown voltage

V^CE(sat)I^C= 3A , I^B= 150mA

V^BE(sat)I^C= 3V , I^B= 150mA

V^(BR)CBOI^C= 10ìA , I^E= 0

0.25

0.5

1.5

I^C= 10ìA , R^BE=

Collector-to-emitter breakdown voltage

V(BR)CEO

I^C= 10mA , R^BE=

Diode forward voltage

Base-emitter resistance

V^F

I^F= 0.5A

1.5

R^BE

1.5

kÙ

Marking

http://www.twtysemi.com

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sales@twtysemi.com

4008-318-123

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