5秒后页面跳转
2SD2153 PDF预览

2SD2153

更新时间: 2024-01-16 08:53:01
品牌 Logo 应用领域
TYSEMI 晶体晶体管放大器
页数 文件大小 规格书
1页 142K
描述
Low saturation voltage. Excellent DC current gain characteristics.

2SD2153 技术参数

是否无铅: 不含铅是否Rohs认证: 符合
生命周期:ActiveReach Compliance Code:compliant
ECCN代码:EAR99风险等级:5.81
外壳连接:COLLECTOR最大集电极电流 (IC):2 A
集电极-发射极最大电压:25 V配置:SINGLE
最小直流电流增益 (hFE):1200JESD-30 代码:R-PSSO-F3
JESD-609代码:e2元件数量:1
端子数量:3最高工作温度:150 °C
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:SMALL OUTLINE峰值回流温度(摄氏度):260
极性/信道类型:NPN最大功率耗散 (Abs):0.5 W
认证状态:Not Qualified子类别:Other Transistors
表面贴装:YES端子面层:Tin/Copper (Sn/Cu)
端子形式:FLAT端子位置:SINGLE
处于峰值回流温度下的最长时间:10晶体管应用:AMPLIFIER
晶体管元件材料:SILICON

2SD2153 数据手册

  
TransistIoCrs  
Product specification  
2SD2153  
SOT-89  
Unit: mm  
+0.1  
4.50  
-0.1  
+0.1  
1.50  
-0.1  
+0.1  
1.80  
-0.1  
Features  
Low saturation voltage.  
Excellent DC current gain characteristics.  
2
3
+0.1  
0.53  
-0.1  
1
+0.1  
0.48  
-0.1  
+0.1  
0.44  
-0.1  
1. Base  
+0.1  
3.00  
-0.1  
2. Collector  
3. Emiitter  
Absolute Maximum Ratings Ta = 25  
Parameter  
Collector-base voltage  
Collector-emitter voltage  
Emitter-base voltage  
Symbol  
VCBO  
VCEO  
VEBO  
IC  
Rating  
30  
Unit  
V
25  
V
6
V
Collector current  
2
A
Collector power dissipation  
Junction temperature  
Storage temperature  
PC  
0.5  
150  
W
Tj  
Tstg  
-55 to +150  
Electrical Characteristics Ta = 25  
Parameter  
Symbol  
Testconditons  
Min  
Typ  
Max  
Unit  
V
Collector-base breakdown voltage  
Collector-emitter breakdown voltage  
Emitter-base breakdown voltage  
Collector cutoff current  
BVCBO IC=50ìA  
BVCEO IC=1mA  
BVEBO IE=50ìA  
30  
25  
6
V
V
ICBO  
IEBO  
VCB=20V  
VEB=5V  
0.5  
0.5  
ìA  
ìA  
V
Emitter cutoff current  
Collector-emitter saturation voltage  
DC current transfer ratio  
Output capacitance  
VCE(sat) IC=1A, IB=20mA  
0.12  
0.5  
hFE  
fT  
VCE=6V, IC=0.5A  
560  
2700  
VCE=10V, IE= -10mA, f=100MHz  
VCB=10V, IE=0A, f=1MHz  
110  
22  
MHz  
pF  
Transition frequency  
Cob  
hFE Classification  
DN  
Marking  
Rank  
hFE  
U
V
W
560 1200  
820 1800  
1200 2700  
http://www.twtysemi.com  
1 of 1  
sales@twtysemi.com  
4008-318-123  

与2SD2153相关器件

型号 品牌 获取价格 描述 数据表
2SD2153_09 ROHM

获取价格

High gain amplifier transistor (25V, 2A)
2SD2153_15 SECOS

获取价格

NPN Plastic Encapsulated Transistor
2SD2153E ETC

获取价格

TRANSISTOR | BJT | NPN | 25V V(BR)CEO | 2A I(C) | SC-62
2SD2153T100/E ROHM

获取价格

2000mA, 25V, NPN, Si, SMALL SIGNAL TRANSISTOR
2SD2153T100/EU ROHM

获取价格

2000mA, 25V, NPN, Si, SMALL SIGNAL TRANSISTOR
2SD2153T100/UV ROHM

获取价格

2000mA, 25V, NPN, Si, SMALL SIGNAL TRANSISTOR
2SD2153T100U ROHM

获取价格

Small Signal Bipolar Transistor, 2A I(C), 25V V(BR)CEO, 1-Element, NPN, Silicon, SC-62, 3
2SD2153T100UW ROHM

获取价格

Small Signal Bipolar Transistor, 2A I(C), 25V V(BR)CEO, 1-Element, NPN, Silicon,
2SD2153T100V ROHM

获取价格

Small Signal Bipolar Transistor, 2A I(C), 25V V(BR)CEO, 1-Element, NPN, Silicon, SC-62, 3
2SD2153T100VW ROHM

获取价格

Small Signal Bipolar Transistor, 2A I(C), 25V V(BR)CEO, 1-Element, NPN, Silicon,