Datasheet > 2SD1997

2SD1997

更新时间： 2024-11-24 12:53:43

品牌	Logo	应用领域
TYSEMI		二极管
页数	文件大小	规格书
1页	151K
描述
Contains diode between collector and emitter. Low saturation voltage.

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数据手册

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2SD1997 数据手册

SMD Type

TransistIoCrs

Product specification

2SD1997

Features

Contains diode between collector and emitter.

Low saturation voltage.

Large current capacity.

Small-sized package making it easy to provide highdensity,

small-sized hybrid ICs.

Absolute Maximum Ratings Ta = 25

Parameter

Collector-base voltage

Symbol

Rating

Unit

V^CBO

V^CEO

V^EBO

I^C

Collector-emitter voltage

Emitter-base voltage

Collector current

Collector current (pulse)

Collector dissipation

Jumction temperature

Storage temperature

I^CP

1.5

P^C

T^j

150

T^stg

-55 to +150

Electrical Characteristics Ta = 25

Parameter

Symbol

Ic^BO

Testconditons

Min

Typ

Max

1.0

Unit

ìA

Collector cutoff current

V^CB= 30V , I^E= 0

V^CE= 2V , I^C= 0.5A

V^CE= 2V , I^C=2A

DC current Gain

h^FE

Gain bandwidth product

f^T

V^CE= 2V , I^C= 0.5A

V^CB= 10V , f = 1MHz

100

MHz

Output capacitance

C^ob

Collector-emitter saturation voltage

Base-emitter on state voltage

Collector-to-base breakdown voltage

V^CE(sat)I^C= 1A , I^B= 50mA

V^BE(ON)I^CE= 2V , I^C= 1A

V^(BR)CBOI^C= 10ìA , I^E= 0

I^C= 10ìA , R^BE=

0.12

0.3

Collector-to-emitter breakdown voltage

I^C= 10mA , R^BE=

IF = 0.5A

V^(BR)CEO

Diode forward voltage

Base-emitter resistance

Base resistance

1.5

kÙ

R^BE

0.8

120

160

200

Marking

http://www.twtysemi.com

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sales@twtysemi.com

4008-318-123

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