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TY Semiconductor Co., Ltd 更新时间：2023-05-12 10:11:29

台湾TY专注致力于电源管理IC及功率器件（MOSFET）Discrete研发、设计、制造、封装、测试及行销业务。为客户提供完整的解决方案及具价格的竞争优势。产品涵盖电源管理、运算放大器，低压LV MOS管、中压MV MOS管、三极管、高频管等，封装形式覆盖SC-70、SC-70-5、SC70-6、SOT23、SOT23-5、SOT23-6、SOT523、SOT323、SOT363、SOT223、SOT89、SOT252、DFN1010、DFN3*3、DFN5*6、SOP8系列。

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型号	品牌	价格	文档	应用	描述

2SC5211	TYSEMI	获取价格		晶体晶体管	High voltage VCEO=50V. Small package for mounting.Collector-base voltage VCBO 55 V

2SC5161	TYSEMI	获取价格		晶体晶体管	High breakdown voltage.VCEO = 400V NPN silicon transistor

2SC5069	TYSEMI	获取价格			High current capacity. Adoption of MBIT process. High DC current gain.

2SC5053	TYSEMI	获取价格			Low saturation voltage, typically VCE(sat) = 0.12V at IC / IB = 500mA / 50mA.

2SC5026	TYSEMI	获取价格			Low collector-emitter saturation voltage VCE(sat). High collector-emitter voltage (Base op

2SC4984	TYSEMI	获取价格			Large current capacity. Low collector-to-emitter saturation voltage.

2SC4942	TYSEMI	获取价格		晶体晶体管开关	New package with dimensions in between those of small signal and power signal package

2SC4852	TYSEMI	获取价格			Small output capacitance. Low collector-to-emitter saturation voltage.

2SC4782	TYSEMI	获取价格		晶体开关晶体管光电二极管	High-speed switching. Low collector to emitter saturation voltage VCE(sat).

2SC4774	TYSEMI	获取价格		晶体晶体管开关光电二极管	Very low output-on resistance (Ron). Low capacitance.

2SC4755	TYSEMI	获取价格		开关	High-speed switching. Low collector to emitter saturation voltage VCE(sat).

2SC4738	TYSEMI	获取价格		晶体晶体管光电二极管放大器	High voltage and high current:VCE=50V,IC=150mA(Max.) High hFE: =120 to 700

2SC4705	TYSEMI	获取价格		晶体晶体管开关	High DC current gain (hFE=800 to 3200). Low collector-to-emitter saturation voltage

2SC4695	TYSEMI	获取价格			Adoption of FBET process. Small ON resistance [Ron=1W (IB=5mA)].

2SC4694	TYSEMI	获取价格			Adoption of MBIT process. High DC current gain. High VEBO (VEBO 25V).

2SC4684	TYSEMI	获取价格			High DC current gain. Low collector saturation voltage. High power dissipation.

2SC4667	TYSEMI	获取价格		晶体开关晶体管光电二极管	High transition frequency: fT = 400 MHz (typ.) High speed switching time: tstg= 15 ns (typ

2SC4666	TYSEMI	获取价格		晶体晶体管开关光电二极管	High hFE: hFE = 600 3600 High collector current: IC = 150 mA (max)

2SC4618	TYSEMI	获取价格		晶体晶体管光电二极管放大器	Low collector capacitance. Low rbb, high gain, and excellent noise characteristics.

2SC4617	TYSEMI	获取价格		晶体晶体管	Low Cob : Cob=2.0pF (Typ.) NPN silicon transistor

2SC4615	TYSEMI	获取价格		晶体晶体管开关	Large current calcity (IC=1A) High blocking voltage(VCEO 400V)

2SC4601	TYSEMI	获取价格			Surface mount type device making the following possible. Adoption of MBIT process.

2SC4600	TYSEMI	获取价格		晶体开关晶体管	Surface mount type device making the following possible. Fast switching speed.

2SC4599	TYSEMI	获取价格		开关	Surface mount type device making the following possible. Fast switching speed.

2SC4598	TYSEMI	获取价格		开关	Surface mount type device making the following possible. Fast switching speed.

2SC4597	TYSEMI	获取价格			Surface mount type device making the following possible. Adoption of MBIT process.

2SC4577	TYSEMI	获取价格		晶体晶体管光电二极管放大器	Low collector-to-emitter saturation voltage. Small-sized package.

2SC4562	TYSEMI	获取价格		晶体晶体管光电二极管 ISM频段放大器	High transition frequency fT. Small collector output capacitance cob.

2SC4555	TYSEMI	获取价格			Very small-sized package Low collector-to-emitter saturation voltage.

2SC4548	TYSEMI	获取价格		晶体晶体管	High Breakdown Voltage Adoption of MBIT Process Excellent hFE Linearlity.