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2SC4666

更新时间: 2024-11-20 12:53:43
品牌 Logo 应用领域
TYSEMI 晶体晶体管开关光电二极管
页数 文件大小 规格书
1页 71K
描述
High hFE: hFE = 600 3600 High collector current: IC = 150 mA (max)

2SC4666 数据手册

  
TransistIoCrs  
Product specification  
2SC4666  
Features  
High hFE: hFE = 600 3600  
High voltage: VCEO = 50 V  
High collector current: IC = 150 mA (max)  
Small package  
1 Emitter  
2 Base  
3 Collector  
Absolute Maximum Ratings Ta = 25  
Parameter  
Collector-base voltage  
Collector-emitter voltage  
Emitter-base voltage  
Collector current  
Symbol  
VCBO  
VCEO  
VEBO  
IC  
Rating  
Unit  
V
50  
50  
V
5
150  
V
mA  
mA  
mW  
Base current  
IB  
30  
Collector power dissipation  
Junction temperature  
Storage temperature  
PC  
100  
Tj  
125  
Tstg  
-55 to +125  
Electrical Characteristics Ta = 25  
Parameter  
Symbol  
ICBO  
Testconditons  
Min  
Typ  
Max  
0.1  
Unit  
ìA  
Collector cut-off current  
Emitter cut-off current  
DC current gain  
VCB = 50 V, IE = 0  
VEB = 5 V, IC = 0  
IEBO  
0.1  
ìA  
hFE  
VCE = 6 V, IC = 2 mA  
600  
100  
3600  
Collector-emitter saturation voltage  
Transition frequency  
VCE (sat) IC = 100 mA, IB = 10 mA  
0.12 0.25  
250  
V
fT  
VCE = 10 V, IC = 10 mA  
MHz  
pF  
Collector output capacitance  
Cob  
VCB = 10 V, IE = 0, f = 1 MHz  
3.5  
VCE = 6 V, IC = 0.1 mA, f = 100 Hz,Rg =  
10 kÙ  
NF(1)  
NF(2)  
0.5  
0.3  
dB  
dB  
Noise figure  
VCE = 6 V, IC = 0.1 mA, f = 1 kHz,Rg =  
10 kÙ  
hFE Classification  
P
Marking  
Rank  
A
B
hFE  
600 1800  
1200 3600  
http://www.twtysemi.com  
1 of 1  
sales@twtysemi.com  
4008-318-123  

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