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2SC4548 PDF预览

2SC4548

更新时间: 2024-11-20 12:53:43
品牌 Logo 应用领域
TYSEMI 晶体晶体管
页数 文件大小 规格书
3页 444K
描述
High Breakdown Voltage Adoption of MBIT Process Excellent hFE Linearlity.

2SC4548 数据手册

 浏览型号2SC4548的Datasheet PDF文件第2页浏览型号2SC4548的Datasheet PDF文件第3页 
Product specification  
2SC4548  
Features  
High Breakdown Voltage  
Adoption of MBIT Process  
Excellent hFE Linearlity.  
Absolute Maximum Ratings Ta = 25  
Parameter  
Collector-Base Voltage  
Symbol  
VCBO  
VCEO  
VEBO  
IC  
Rating  
400  
Unit  
V
Collector-Emitter Voltage  
Emitter-Base Voltage  
400  
V
5
V
Collector Current  
200  
mA  
mA  
W
Collector Current (Pulse)  
Collector Power Dissipation  
Jumction temperature  
ICP  
400  
PC *  
Tj  
1.3  
150  
Storage temperature Range  
* Mounted on ceramic board (250 mm2 x 0.8 mm)  
Tstg  
-55 to +150  
Electrical Characteristics Ta = 25  
Parameter  
Symbol  
ICBO  
Testconditons  
Min  
Typ  
Max  
0.1  
Unit  
A
Collector Cut-off Current  
VCB = 300V , IE = 0  
VEB = 4V , IC = 0  
Emitter Cut-off Current  
IEBO  
0.1  
A
Collector-Base Breakdown Voltage  
Collector-Emitter Breakdown Voltage  
Emitter-Base Breakdown Voltage  
DC Current Gain  
V(BR)CBO IC = 10uA , IE = 0  
V(BR)CEO  
400  
400  
5
V
V
IC = 1mA , RBE =  
V(BR)EBO IE = 10uA , IC = 0  
hFE VCE = 10V , IC = 50mA  
V
60  
200  
0.8  
1
Collector-Emitter Saturation Voltage  
Base-Emitter Saturation Voltage  
Gain-Bandwidth Product  
VCE(sat) IC = 50mA , IB = 5mA  
VBE(sat) IC = 50mA , IB = 5mA  
V
V
fT  
VCE = 30V , IC = 10mA  
70  
5
MHz  
pF  
pF  
Collector Output Capacitance  
Reverse Transfer Capacitance  
Cob  
Cre  
VCB = 30V , IE = 0 , f = 1MHz  
VCB = 30V , IE = 0 , f = 1MHz  
4
Turn-On Time  
Turn-Off Time  
ton  
toff  
0.25  
5.0  
See Test Circuit.  
ìs  
http://www.twtysemi.com  
1 of 3  
sales@twtysemi.com  
4008-318-123  

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