TY Semiconductor Co., Ltd 更新时间:2021-03-04 15:18:39
台湾TY专注致力于电源管理IC及功率器件(MOSFET)Discrete研发、设计、制造、封装、测试及行销业务。为客户提供完整的解决方案及具价格的竞争优势。产品涵盖电源管理、运算放大器,低压LV MOS管、中压MV MOS管、三极管、高频管等,封装形式覆盖SC-70、SC-70-5、SC70-6、SOT23、SOT23-5、SOT23-6、SOT523、SOT323、SOT363、SOT223、SOT89、SOT252、DFN1010、DFN3*3、DFN5*6、SOP8系列。
型号 | 品牌 | 价格 | 文档 | 应用 | 描述 | |
2SD1820 | TYSEMI | 获取价格 | ![]() |
Low collector-emitter saturation voltage VCE(sat). | ||
2SD1819A | TYSEMI | 获取价格 | ![]() |
High foward current transfer ratio hFE.Low collector to emitter saturation voltage VCE(sat | ||
2SD1817 | TYSEMI | 获取价格 | ![]() |
High DC current gain. Collector-base voltage VCBO 80 V | ||
2SD1815 | TYSEMI | 获取价格 | ![]() |
Low collector-to-emitter saturation voltage. Excllent linearity of hFE. | ||
2SD1782K | TYSEMI | 获取价格 | ![]() |
Low VCE(sat).VCE(sat) = 0.2V(Typ.) IC / IB= 0.5A / 50mA High VCEO, VCEO=80V. | ||
2SD1767 | TYSEMI | 获取价格 | ![]() |
High breakdown voltage, BVCEO=80V, and high current, IC=0.7A. | ||
2SD1766 | TYSEMI | 获取价格 | ![]() |
Low VCE(sat), VCE(sat) = 0.5V (typical) (IC = 2A, IB= 0.2A). | ||
MMBZ5232BW | TYSEMI | 获取价格 | ![]() |
二极管测试 | Planar Die Construction | |
MMBTA93 | TYSEMI | 获取价格 | ![]() |
晶体晶体管光电二极管IOT | PNP Silicon | |
2SD999 | TYSEMI | 获取价格 | ![]() |
World standard miniature package:SOT-89. Excellent dc current gain linearity. | ||
2SD992-Z | TYSEMI | 获取价格 | ![]() |
晶体晶体管开关 | Low VCE(sat). Collector-base voltage VCBO 30 V | |
2SD965K | TYSEMI | 获取价格 | ![]() |
Satisfactory operation performances at high efficiency with the lowvoltage power supply. | ||
2SD965-Q | TYSEMI | 获取价格 | ![]() |
Low collector-emitter saturation voltage VCE(sat) low-voltage power supply. | ||
2SD965 | TYSEMI | 获取价格 | ![]() |
晶体晶体管开关 | Satisfactory operation performances at high efficiency with the lowvoltage power supply. | |
2SD882 | TYSEMI | 获取价格 | ![]() |
Excellent hFE linearity and high hFE hFE = 60 to 400 (VCE = 2 V, IC = 1 A) | ||
2SD875 | TYSEMI | 获取价格 | ![]() |
PC | Large collector power dissipation PC. High collector-emitter voltage (Base open) VCEO. | |
2SD1758 | TYSEMI | 获取价格 | ![]() |
晶体晶体管 | Low VCE(sat), VCE(sat) = 0.5V Epitaxial planar type NPN silicon transistor | |
2SD1757K | TYSEMI | 获取价格 | ![]() |
晶体晶体管光电二极管 | Low VCE(sat). (Typ.8mV at IC/IB = 10/1mA). Optimal for muting. | |
2SD1733 | TYSEMI | 获取价格 | ![]() |
High VCEO, VCEO=80V . High IC, IC=1A (DC) . Good hFE linearity . | ||
2SD1719 | TYSEMI | 获取价格 | ![]() |
High forward current transfer ratio hFE which has satisfactory linearity | ||
2SD1664 | TYSEMI | 获取价格 | ![]() |
Low VCE(sat) Compliments to 2SB1132 Collector-Base Voltage VCBO 40 V | ||
2SD1628 | TYSEMI | 获取价格 | ![]() |
Low saturation voltage. High hFE. Large current capacity. small-sized hybrid ICs | ||
2SD1624 | TYSEMI | 获取价格 | ![]() |
晶体开关晶体管 | Low collector-to-emitter saturation voltage. Fast switching speed. | |
2SD1623 | TYSEMI | 获取价格 | ![]() |
Adoption of FBET, MBIT processes. Low collector-to-emitter saturation voltage. | ||
2SD1622 | TYSEMI | 获取价格 | ![]() |
Very small size making it easy to provide highdensity hybrid ICs | ||
2SD1621 | TYSEMI | 获取价格 | ![]() |
Adoption of FBET, MBIT processes. Low collector-to-emitter saturation voltage. | ||
2SD1620 | TYSEMI | 获取价格 | ![]() |
Less power dissipation because of low VCE(sat), permitting more flashes of light to be emi | ||
2SD1619 | TYSEMI | 获取价格 | ![]() |
Very small size making it easy to provide hig | ||
2SD1618 | TYSEMI | 获取价格 | ![]() |
晶体晶体管放大器 | Low collector-to-emitter saturation voltage. Very small size making it easy to provide hig | |
2SD1615A | TYSEMI | 获取价格 | ![]() |
晶体晶体管开关 | World Standard Miniature Package. Low VCE(sat) VCE(sat) = 0.15 V |
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