Datasheet > 2SD875

2SD875

更新时间： 2024-09-25 12:53:43

品牌	Logo	应用领域
TYSEMI		PC
页数	文件大小	规格书
1页	117K
描述
Large collector power dissipation PC. High collector-emitter voltage (Base open) VCEO.

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中文翻译

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数据手册

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2SD875 数据手册

SSMMDD TTyyppee

TransistIoCrs

Product specification

2SD875

Features

Large collector power dissipation PC.

High collector-emitter voltage (Base open) V^CEO.

Mini power type package, allowing downsizing of the equipment

and automatic insertion through the tape packing and the magazine

packing.

Absolute Maximum Ratings Ta = 25

Parameter

Collector-base voltage

Symbol

V^CBO

V^CEO

V^EBO

I^C

Rating

Unit

Collector-emitter voltage

Emitter-base voltage

Collector current

0.5

Peak collector current

Collector power dissipation

Junction temperature

Storage temperature

I^CP

P^C

T^j

150

T^stg

-55 to +150

Electrical Characteristics Ta = 25

Parameter

Symbol

Testconditons

I^C= 10 ìA, I^E= 0

Min

Typ

Max

Unit

Collector-base voltage

V^CBO

V^CEO

V^EBO

ICBO

h^FE

Collector-emitter voltage

Emitter-base voltage

I^C= 100 ìA, I^B= 0

I^E= 10 ìA, I^C= 0

Collector-base cutoff current

Forward current transfer ratio

Collector-emitter saturation voltage

Base-emitter saturation voltage

Transition frequency

V^CB= 20 V, I^B= 0

V^CE= 10 V, I^C= 150 mA

0.1

330

0.4

1.2

ìA

130

V^CE(sat)I^C= 300 mA, I^B= 30 mA

VBE(sat) IC = 300 mA, IB = 30 mA

0.2

0.85

120

f^T

V^CB= 10 V, I^E= -50 mA, f = 200 MHz

V^CB= 10 V, I^E= 0, f = 1 MHz

MHz

Collector output capacitance

C^ob

hFE Classification

Marking

Rank

h^FE

130 220

185 330

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