Datasheet > 2SD965K

2SD965K

更新时间： 2024-11-18 12:53:43

品牌	Logo	应用领域
TYSEMI		/
页数	文件大小	规格书
1页	118K
描述
Satisfactory operation performances at high efficiency with the lowvoltage power supply.

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中文翻译

获取价格

数据手册

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2SD965K 数据手册

SSMMDD TTyyppee

TransistIoCrs

Product specification

2SD965K

Features

Low collector-emitter saturation voltage V^CE(sat)

Satisfactory operation performances at high efficiency with

the lowvoltage power supply.

Absolute Maximum Ratings Ta = 25

Parameter

Collector-base voltage

Collector-emitter voltage

Emitter-base voltage

Collector current

Symbol

V^CBO

V^CEO

V^EBO

I^C

Rating

Unit

Peak collector current

Collector power dissipation

Junction temperature

Storage temperature

I^CP

0.5

P^C

T^j

150

T^stg

-55 to +150

Electrical Characteristics Ta = 25

Parameter

Symbol

Testconditons

Min

Typ

Max

Unit

Collector-emitter breakdown voltage

Emitter-base breakdown voltage

Collector-base cutoff current

Collector-emitter cutoff current

Emitter-base cutoff current

V^CEO

V^EBO

I^CBO

I^CEO

I^EBO

I^C= 1 mA, I^B= 0

I^E= 10 ìA, I^C= 0

V^CB= 10 V, I^E= 0

V^CE= 10 V, I^B= 0

V^EB= 5 V, I^C= 0

V^CE= 2 V, I^C= 0.5 A

V^CE= 2 V, I^C= 1 A

0.1

600

230

150

Forward current transfer ratio

hFE

Collector-emitter saturation voltage

Collector output capacitance

Transition frequency

V^CE(sat)I^C= 2 A, I^B= 0.1 A

0.28 1.00

C^ob

f^T

VCB = 20 V, IE = 0, f = 1 MHz

V^CB= 6 V, I^E= -50 mA, f = 200 MHz

150

MHz

hFE Classification

Rank

h^FE

230 380

340 600

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中文翻译

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