Datasheet > 2SD1619

2SD1619

更新时间： 2024-11-25 12:53:43

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描述
Very small size making it easy to provide highdensity,small-sized hybrid ICâs.

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中文翻译

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数据手册

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2SD1619 数据手册

SSMMDD TTyyppee

Transistors

Product specification

2SD1619

Features

Very small size making it easy to provide highdensity,

small-sized hybrid IC’s.

Absolute Maximum Ratings Ta = 25

Parameter

Collector-base voltage

Collector-emitter voltage

Emitter-base voltage

Symbol

V^CBO

V^CEO

V^EBO

I^C

Rating

Unit

Collector current

Collector current (pulse)

I^CP

500

P^C

Collector dissipation

P^{C *}

T^j

1.3

Junction temperature

Storage temperature

150

T^stg

-55 to +150

* Mounted on ceramic board(250mm2X0.8mm)

Electrical Characteristics Ta = 25

Parameter

Symbol

I^CBO

Testconditons

V^CB= 20 V, I^E=0

Min

100

Typ

Max

0.1

Unit

ìA

Collector cutoff current

Emitter cutoff current

I^EBO

h^FE

f^T

V^EB= 4 V, I^C=0

0.1

ìA

DC current gain

V^CE= 2 V , I^C= 50 mA

V^CE= 10 V , I^C= 50 mA

VCB = 10 V , f = 1.0MHz

560

Gain bandwidth product

180

MHz

Output capacitance

C^ob

Collector-emitter saturation voltage

Base-emitter saturation voltage

Collector-base breakdown voltage

Collector-emitter breakdown voltage

Emitter-base breakdown voltage

V^CE(sat)I^C= 500 mA , I^B= 50 mA

V^BE(sat)I^C= 500 mA , I^B= 50 mA

V^(BR)CBOI^C= 10ìA , I^E= 0

0.1

0.3

1.2

0.85

V^(BR)CEO

IC = 1mA , RBE =

V^(BR)EBOI^E= 10ìA , I^C= 0

hFE Classification

Marking

Rank

hFE

100 200

140 280

200 400

280 560

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2SD1619-T	KEXIN	获取价格	NPN Transistors
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