Datasheet > 2SD965-Q

2SD965-Q

更新时间： 2024-02-12 23:35:16

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TYSEMI		/
页数	文件大小	规格书
2页	172K
描述
Low collector-emitter saturation voltage VCE(sat) low-voltage power supply.

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中文翻译

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技术参数
数据手册

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2SD965-Q 技术参数

生命周期：	Contact Manufacturer	Reach Compliance Code：	compliant
风险等级：	5.61	Base Number Matches：	1

2SD965-Q 数据手册

Product specification

2SD965-Q

Unit:mm

SOT-89

1.50 ±0.1

4.50±0.1

1.80±0.1

■ Features

● Low collector-emitter saturation voltage VCE(sat)

● Satisfactory operation performances at high efficiency with

the low-voltage power supply.

0.44±0.1

0.48±0.1

0.53±0.1

3.00±0.1

1.Base

2.Collector

3.Emitter

■ Absolute Maximum Ratings Ta = 25℃

Parameter

Collector-base voltage

Symbol

VCBO

VCEO

VEBO

Rating

Unit

Collector-emitter voltage

Emitter-base voltage

Collector current

0.5

Collector power dissipation

Junction temperature

Storage temperature

℃

150

Tstg

-55 to +150

■ Electrical Characteristics Ta = 25℃

Parameter

Collector-base breakdown voltage

Collector-emitter breakdown voltage

Emitter-base breakdown voltage

Collector Cut-off Current

Symbol

Test conditions

Min

Typ Max

Unit

V(BR)CBO IC=100μA, IE=0

V(BR)CEO IC= 1mA. IB=0

V(BR)EBO IE= 10μA, IC=0

ICBO

IEBO

VCB=10V, IE=0

0.1

μA

Emitter Cut-off Current

VEB = 7V, IC = 0

VCE = 2 V, IC = 0.5 A

VCE = 2 V, IC = 2A

230

150

380

DC current gain

hFE

Collector-emitter saturation voltage

Collector output capacitance

Transition frequency

VCE(sat) IC = 2A, IB = 0.1 A

Cob

VCB = 20 V, IE = 0, f = 1 MHz

VCB = 6 V, IC = 50mA

150

MHz

■ Marking

Marking

D965Q

http://www.twtysemi.com

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sales@twtysemi.com

4008-318-123

中文翻译

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