Datasheet > 2SD1664

2SD1664

更新时间： 2024-11-04 12:53:43

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TYSEMI		/
页数	文件大小	规格书
3页	473K
描述
Low VCE(sat) Compliments to 2SB1132 Collector-Base Voltage VCBO 40 V

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2SD1664 数据手册

SSMMDD TTyyppee

Product specification

2SD1664

Features

Low V^CE(sat)

Compliments to 2SB1132

Absolute Maximum Ratings Ta = 25

Parameter

Collector-Base Voltage

Collector-Emitter Voltage

Emitter-Base Voltage

Symbol

V^CBO

Rating

Unit

V^CEO

V^EBO

Collector Current

(DC)

I^C

P^W=20ms, duty=1/2

0.5

Collector Power Dissipation

Jumction temperature

P^C*

T^j

150

Storage temperature Range

T^stg

-55 to +150

* mounted on a 40x40x0.7mm ceramic board.

Electrical Characteristics Ta = 25

Parameter

Symbol

I^CBO

Testconditons

Min

Typ

Max

0.5

Unit

ìA

Collector Cut-off Current

V^CB= 20V , I^E= 0

VEB = 4V , IC = 0

Emitter Cut-off Current

IEBO

0.5

Collector-base Breakdown Voltage

Collector-emitter Breakdown Voltage

Emitter-Base Breakdown Voltage

DC Current Gain

V^(BR)CBOI^C= 50uA , I^E= 0

V^(BR)CEOI^C= 1mA , I^B= 0

V^(BR)EBOI^E= 50uA

hFE

VCE = -3V , IC = -0.1A

390

0.4

Collector-emitter Saturation Voltage

Transition Frequency

V^CE(sat)I^C= 500mA , I^B= 50mA

0.15

150

f^T

V^CE= 5V , I^E= -50mA , f = 100MHz

VCB = 10V , IE = 0 , f = 1MHz

MHz

Collector Output Capacitance

Cob

hFE Classification

Marking

Rank

h^FE

180

120

270

180

390

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