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2SD1767

更新时间: 2024-11-24 12:53:43
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TYSEMI /
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1页 135K
描述
High breakdown voltage, BVCEO=80V, and high current, IC=0.7A.

2SD1767 数据手册

  
Product specification  
2SD1767  
Features  
High breakdown voltage, BVCEO=80V, and  
high current, IC=0.7A.  
Absolute Maximum Ratings Ta = 25  
Parameter  
Collector-base voltage  
Collector-emitter voltage  
Emitter-base voltage  
Symbol  
VCBO  
Rating  
Unit  
V
80  
VCEO  
80  
V
VEBO  
5
V
IC  
0.7  
A
Collector current  
IC (Pulse) *1  
1
A
PC  
0.5  
2
W
W
Collector power dissipation  
2
PC  
Tj  
Tstg  
*
Junction temperature  
Storage temperature  
150  
-55 to +150  
*1. Pw=10ms.  
*2. 40X40X0.7mm Ceramic board.  
Electrical Characteristics Ta = 25  
Parameter  
Symbol  
Testconditons  
Min  
80  
80  
5
Typ  
Max  
Unit  
V
Collector-base voltage  
Collector-emitter voltage  
Emitter-base voltage  
BVCBO IC=50ìA  
BVCEO IC=2mA  
BVEBO IE=50ìA  
V
V
Collector cutoff current  
Emitter cutoff current  
ICBO  
IEBO  
VCB=50V  
VEB=4V  
0.5  
0.5  
0.4  
390  
ìA  
ìA  
V
Collector-emitter saturation voltage  
Forward current transfer ratio  
Transition frequency  
VCE(sat) IC=500mA,IB=50mA  
hFE VCE=3V,IC=0.1A  
fT  
0.2  
82  
VCE=10V, IE= -50mA, f=100MHz  
VCB=10V, IE=0A, f=1MHz  
120  
10  
MHz  
pF  
Output capacitance  
Cob  
hFE Classification  
DC  
Marking  
Rank  
hFE  
P
Q
R
82 180  
120 270  
180 390  
http://www.twtysemi.com  
1 of 1  
sales@twtysemi.com  
4008-318-123  

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