Datasheet > 2SD882

2SD882

更新时间： 2024-11-18 12:53:43

品牌	Logo	应用领域
TYSEMI		/
页数	文件大小	规格书
1页	117K
描述
Excellent hFE linearity and high hFE hFE = 60 to 400 (VCE = 2 V, IC = 1 A)

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2SD882 数据手册

SSMMDD TTyyppee

TransistIoCrs

Product specification

2SD882

Features

Excellent h^FElinearity and high h^FE

h^FE= 60 to 400 (V^CE= 2 V, I^C= 1 A)

Absolute Maximum Ratings Ta = 25

Parameter

Collector to Base Voltage

Collector to Emitter Voltage

Emitter to Base Voltage

Collector Current to Continuous

Collector Dissipation

Symbol

V^CBO

V^CEO

V^EBO

I^C

Rating

Unit

P^c

0.5

Junction Temperature

T^J

150

Storage Temperature

T^stg

-55 to 150

Electrical Characteristics Ta = 25

Parameter

Symbol

Testconditons

I^c=100uA ,I^E=0

Min

Typ

Max

Unit

Collector-base breakdown voltage

Collector-emitter breakdown voltage

Emitter-base breakdown voltage

Collector cut-off current

V^CBO

V^CEO

V^EBO

ICBO

I^CEO

I^EBO

I^C= 10 mA , I^B=0

I^E= 100 uA ,I^C=0

V^CB=40 V , I^E=0

V^CE=30 V , I^B=0

V^EB=6V , I^C=0

Collector cut-off current

Emitter cut-off current

V^CE= 2V, I^C= 1A

V^CE=2V, I^C= 100mA

I^C=2A, I^B= 0.2A

400

DC current gain

h^FE

Collector-emitter saturation voltage

Base-emitter saturation voltage

Transition frequency

V^CE(sat)

V^BE(sat)

f ^T

0.5

1.5

V^CE=5 V, I^C=0.1mA,f = 10MHz

MHz

hFE Classification

Rank

hFE

60 120

100 200

160 320

200 400

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