Datasheet > 2SC4694

2SC4694

更新时间： 2024-10-26 12:53:43

品牌	Logo	应用领域
TYSEMI		/
页数	文件大小	规格书
4页	463K
描述
Adoption of MBIT process. High DC current gain. High VEBO (VEBO 25V).

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数据手册

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2SC4694 数据手册

Transistors

SMD Type

SSMMDD TTyyppee

Product specification

2SC4694

Features

Adoption of MBIT process.

High DC current gain.

High V^EBO(V^EBO25V).

High reverse hFE (150 typ).

Small ON resistance [R^on=1Ù (I^B=5mA)].

1 Emitter

2 Base

3 Collector

Absolute Maximum Ratings Ta = 25

Parameter

Collector-base voltage

Collector-emitter voltage

Emitter-base voltage

Collector current

Symbol

V^CBO

V^CEO

V^EBO

I^C

Rating

Unit

500

Collector current (pulse)

Base current

I^CP

800

I^B

100

Collector dissipation

Jumction temperature

Storage temperature

P^C

150

T^j

150

T^stg

-55 to +150

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