Datasheet > 2SC4705

2SC4705

更新时间： 2024-10-26 12:53:43

品牌	Logo	应用领域
TYSEMI		晶体晶体管开关
页数	文件大小	规格书
2页	154K
描述
High DC current gain (hFE=800 to 3200). Low collector-to-emitter saturation voltage

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中文翻译

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2SC4705 数据手册

SMD Type

Product specification

2SC4705

Features

High DC current gain (h^FE=800 to 3200).

Low collector-to-emitter saturation voltage :

V^CE(sat)0.5V max.

High V^EBO: V^EBO15V.

Small size making it easy to provide high-density,

hybrid ICs.

Absolute Maximum Ratings Ta = 25

Parameter

Collector-base voltage

Collector-emitter voltage

Emitter-base voltage

Symbol

V^CBO

V^CEO

V^EBO

I^C

Rating

Unit

Collector current

200

300

Collector current (pulse)

I^CP

Base current

I^B

Collector dissipation,mounted on ceramic

board(250mm²X0.8mm)

Junction temperature

P^C

1.3

T^j

150

Storage temperature

T^stg

-55 to +150

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4008-318-123

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